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参数资料
| 型号： | AM29LV065DU35EIN |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| 中文描述： | 64兆位（8米× 8位）的CMOS 3.0伏特，只有统一部门闪光控制记忆与VersatileIOTM |
| 文件页数： | 28/54页 |
| 文件大小： | 613K |
| 代理商： | AM29LV065DU35EIN |
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Am29LV065D
February 16, 2006
during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the
device enters the erase-suspend-read mode. The sys-
tem can read data from or program data to any sector
not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Reading at
any address within erase-suspended sectors pro-
duces status information on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
Refer to the Write Operation Status section for infor-
mation on these status bits.
After an erase-suspended program operation is com-
plete, the device returns to the erase-suspend-read
mode. The system can determine the status of the
program operation using the DQ7 or DQ6 status bits,
just as in the standard byte program operation.
Refer to the Write Operation Status section for more
information.
In the erase-suspend-read mode, the system can also
issue the autoselect command sequence. Refer to the
Autoselect Mode and Autoselect Command Sequence
sections for details.
To resume the sector erase operation, the system
must write the Erase Resume command. The address
of the erase-suspended sector is required when writ-
ing this command. Further writes of the Resume com-
mand are ignored. Another Erase Suspend command
can be written after the chip has resumed erasing.
Figure 5.
Erase Operation
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See
Table 10
for erase command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相关PDF资料 |
PDF描述 |
|---|---|
| AM29LV065DU35WHF | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU35WHFN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU35WHI | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU35WHIN | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
| AM29LV065DU50EF | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29LV065DU90REF | 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC SM FLASH 3V 64MB |
| AM29LV065DU90REF | 制造商:Spansion 功能描述:FLASH MEMORY IC |
| AM29LV065DU90REI | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC, FLASH MEM, 64MBIT, 90NS, 48-TSOP, Memory Type:Flash, Memory Size:64Mbit, Mem |
| AM29LV065DU-90REI | 制造商:Advanced Micro Devices 功能描述:NOR Flash, 8M x 8, 48 Pin, Plastic, TSSOP |
| AM29LV065DU90RWHF | 制造商:Spansion 功能描述: |
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