参数资料
型号: AM29LV065DU50EFN
厂商: Advanced Micro Devices, Inc.
英文描述: 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
中文描述: 64兆位(8米× 8位)的CMOS 3.0伏特,只有统一部门闪光控制记忆与VersatileIOTM
文件页数: 52/54页
文件大小: 613K
代理商: AM29LV065DU50EFN
52
Am29LV065D
February 16, 2006
REVISION SUMMARY
Revision A (July 27, 2000)
Initial release.
Revision A+1 (August 4, 2000)
Global
Deleted references to the 48-pin reverse TSOP.
Connection Diagrams
Corrected pin 36 on TSOP package to V
IO
.
Accelerated Program Operation, Unlock Bypass
Command Sequence
Modified caution note regarding ACC input.
Revision A+2 (August 14, 2000)
Ordering Information
Corrected 90 ns entry in V
IO
column for FBGA.
Revision A+3 (August 25, 2000)
Table 3
, Am29LV065D Autoselect Codes,
(High Voltage Method)
Corrected the SecSI Sector Indicator Bit codes from
80h/00h to 90h/10h.
Revision A+4 (October 19, 2000)
Global
Changed data sheet status to “Preliminary.”
Revision A+5 (November 7, 2000)
Ordering Information
Deleted burn-in option.
Revision A+6 (November 27, 2000)
Pin Description, and
Table 11
, Write Operation
Status
Deleted references to RY/BY# being available only on
the FBGA package. RY/BY# is also available on the
TSOP package.
Revision A+7 (March 8, 2001)
Global
Deleted “Preliminary” status from document.
Table 4
, Sector Group Protection/Unprotection
Address Table
Corrected the sector group address bits for sectors
64–127.
Revision B (January 10, 2002)
Global
Added TSR048 package. Clarified description of Ver-
satileIO (V
IO
) in the following sections: Distinctive
Characteristics; General Description; VersatileIO (V
IO
)
Control; Operating Ranges; DC Characteristics;
CMOS compatible.
Reduced typical sector erase time from 1.6 s to 0.9 s.
Table 3
, Am29LV065D Autoselect Codes,
(High Voltage Method)
Corrected the autoselect code for sector protection
verification.
Sector Group Protection and Unprotection
Deleted reference to previous method of sector protec-
tion and unprotection.
Autoselect Command Sequence
Clarified description of function.
SecSi (Secured Silicon) Sector Flash
Memory Region
Clarified the customer lockable version of this device
can be programmed and protected only once. In
Table
5
, changed address range in second row.
DC Characteristics
Changed minimum V
OH1
from 0.85V
IO
to 0.8V
IO
. De-
leted reference to Note 6 for both V
OH1
and V
OH2
.
Erase and Program Operations table
Corrected to indicate t
BUSY
specification is a maximum
value.
Erase and Program Performance table
Changed typical sector erase time from 1.6 s to 0.9 s
and typical chip erase time from 205 s to 115 s.
Revision C (March 26, 2004)
SecSi (Secured Silicon) Sector Flash
Memory Region
Modified SecSi Sector protect verify section. Added
algorithm shown in
Figure 3
.
Common Flash Memory Interface
Modified website for CFI specifications and publica-
tions.
Command Definitions
Modified end of first paragraph to “Writing incorrect
address and data values or writing them in the im-
proper sequence may place the device in an unknown
state. A reset command is required to return the de-
vice to reading array data.”
相关PDF资料
PDF描述
AM29LV065DU50EI 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
AM29LV065DU50EIN 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
AM29LV065DU50WHF 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
AM29LV065DU50WHFN 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
AM29LV065DU50WHI 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileIOTM Control
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AM29LV065DU90REF 制造商:Spansion 功能描述:FLASH MEMORY IC
AM29LV065DU90REI 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 64Mbit 8M x 8bit 90ns 48-Pin TSOP 制造商:Spansion 功能描述:IC, FLASH MEM, 64MBIT, 90NS, 48-TSOP, Memory Type:Flash, Memory Size:64Mbit, Mem
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