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参数资料
| 型号： | AM29LV200BB-60RDPC |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1 |
| 中文描述： | 128K X 16 FLASH 3V PROM, 60 ns, UUC43 |
| 封装： | DIE-43 |
| 文件页数： | 9/11页 |
| 文件大小： | 200K |
| 代理商： | AM29LV200BB-60RDPC |
November 18, 2003
Am29LV200B Known Good Die
9
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
Active Die dimensions .x = 3462.6 μm; y = 3277.8 μm
. . . . . . . . . . . . . . . . . . . x = 136.3 mils; y = 129.0 mils
Scribe width . . . . . . . . . . . .x = 87.4 μm; y = 232.2 μm
. . . . . . . . . . . . . . . . . . . . . x = 3.44 mils; y = 9.03 mils
Step dimensions . . . . . . . .x = 3.56 mm; y = 3.51 mm
. . . . . . . . . . . . . . . . . x = 139.76 mils; y = 138.19 mils
Die Thickness. . . . . . . . . . . . .500 μm = 483 +/–51 μm
. . . . . . . . . . . . . . . . . . . . . . . 280 μm = 280 +/–15 μm
Bond Pad Size . . . . . . . . . . . . . .115.9 μm x 115.9 μm
. . . . . . . . . . . . . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
Minimum pad pitch. . . . . . . . . . . . . . . . . . . . 137.8 μm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.43 mils
Pad Area Free of Passivation . . . . . . . . . .13.99 mils
2
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
. . . . . . . . . . . . . . . . . . . .Minimum thickness: 10500
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded with Back-grind type finish (optional)
Passivation. . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
. . . . . . . . . . . . . . . . . . . .Minimum thickness: 14700
Ink dot height . . . . . . . . . . . . . . . . . . . . . .0.8 mils max
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.3 μm max
Ink dot diameter . . . . . . . . . . . . . . . . . . . . .15 mils min
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381 μm min
DC OPERATING CONDITIONS
V
CC
(Supply Voltage) . . . . . . . . . . . . . . 2.7 V to 3.6 V
Operating Temperature
Industrial . . . . . . . . . . . . . . . . . . .–40
°
C to +85
°
C
Commercial . . . . . . . . . . . . . . . . . . .0
°
C to +70
°
C
Extended . . . . . . . . . . . . . . . . . .–55
°
C to +125
°
C
MANUFACTURING INFORMATION
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . .FASL
Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Manufacturing ID (Top Boot). . . . . . . . . . . . .98488AK
(Bottom Boot) . . . . . . . . . . . . . . . . . . . . . . .98488ABK
Preparation for Shipment . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
SPECIAL HANDLING INSTRUCTIONS
Processing
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250
°
C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Storage
Store at a maximum temperature of 30
°
C in a nitrogen-
purged cabinet or vacuum-sealed bag. Observe all
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