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参数资料
| 型号： | Am29LV640DL120RWHE |
| 厂商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| 中文描述： | 64兆位（4个M x 16位），3.0伏的CMOS只均匀部门闪光控制记忆与VersatileI |
| 文件页数： | 2/57页 |
| 文件大小： | 1467K |
| 代理商： | AM29LV640DL120RWHE |
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Publication#
22366
Issue Date:
September 20, 2002
Rev:
B
Amendment/
+8
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV640D/Am29LV641D
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO
Control
DISTINCTIVE CHARACTERISTICS
I
Single power supply operation
— 3.0 to 3.6 volt read, erase, and program operations
I
VersatileIO
control
— Device generates output voltages and tolerates data
input voltages on the DQ input/ouputs as determined
by the voltage on V
IO
I
High performance
— Access times as fast as 90 ns
I
Manufactured on 0.23 μm process technology
I
CFI (Common Flash Interface) compliant
—
Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
I
SecSi (Secured Silicon) Sector region
—
128-word sector for permanent, secure identification
through an 8-word random Electronic Serial Number
—
May be programmed and locked at the factory or by
the customer
—
Accessible through a command sequence
I
Ultra low power consumption (typical values at 3.0 V,
5 MHz)
—
9 mA typical active read current
—
26 mA typical erase/program current
—
200 nA typical standby mode current
I
Flexible sector architecture
—
One hundred twenty-eight 32 Kword sectors
I
Sector Protection
—
A hardware method to lock a sector to prevent
program or erase operations within that sector
—
Sectors can be locked in-system or via programming
equipment
—
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
I
Embedded Algorithms
—
Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
—
Embedded Program algorithm automatically writes
and verifies data at specified addresses
I
Compatibility with JEDEC standards
—
Pinout and software compatible with single-power
supply Flash
—
Superior inadvertent write protection
I
Minimum 1 million erase cycle guarantee per sector
I
Package options
—
48-pin TSOP (Am29LV641DH/DL only)
—
56-pin SSOP (Am29LV640DH/DL only)
—
63-ball Fine-Pitch BGA (Am29LV640DU only)
—
64-ball Fortified BGA (Am29LV640DU only)
I
Erase Suspend/Erase Resume
—
Suspends an erase operation to read data from, or
program data to, a sect27
—
or that is not being erased, then resumes the erase
operation
I
Data# Polling and toggle bits
—
Provides a software method of detecting program or
erase operation completion
I
Unlock Bypass Program command
—
Reduces overall programming time when issuing
multiple program command sequences
I
Ready/Busy# pin (RY/BY#) (Am29LV640DU in FBGA
package only)
—
Provides a hardware method of detecting program or
erase cycle completion
I
Hardware reset pin (RESET#)
—
Hardware method to reset the device for reading array
data
I
WP# pin (Am29LV641DH/DL in TSOP,
Am29LV640DH/DL in SSOP only)
—
At V
IL
, protects the first or last 32 Kword sector,
regardless of sector protect/unprotect status
—
At V
IH
, allows removal of sector protection
—
An internal pull up to V
CC
is provided
I
ACC pin
—
Accelerates programming time for higher throughput
during system production
I
Program and Erase Performance (V
HH
not applied to
the ACC input pin)
—
Word program time: 11 μs typical
—
Sector erase time: 0.9 s typical for each 32 Kword
sector
相关PDF资料 |
PDF描述 |
|---|---|
| Am29LV641DL120RWHE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29LV640DU120RWHE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| Am29LV641DU120RWHE | 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI Control |
| AM29LV640MB120REF | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
| AM29LV640MT110EI | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM29LV640DL90RZI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU-90NI | 制造商:Advanced Micro Devices 功能描述: |
| AM29LV640DU90REI | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 4MX16 90NS 48TSOP - Trays |
| AM29LV640DU-90RWHIT | 制造商:Advanced Micro Devices 功能描述:63-BALL FINE-PITCH BALL GRID ARRAY (FBGA) 0.80 MM PITCH, 11 X 12 MM PACKAGE (FBE063) |
| AM29LV640MB-90REI | 制造商:Advanced Micro Devices 功能描述: |
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