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参数资料
型号： AM29LV640MB120REF
厂商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
中文描述： 64兆位（4个M x 16位/八米× 8位）的MirrorBit⑩3.0伏，只引导扇区闪存
文件页数： 6/66页
文件大小： 836K
代理商： AM29LV640MB120REF
4
Am29LV640MT/B
26190C8 February1,2007
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . 6
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 7
Pin Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Ordering Information. . . . . . . . . . . . . . . . . . . . . . 10
Device Bus Operations . . . . . . . . . . . . . . . . . . . . 11
Table 1. Device Bus Operations .....................................................11
Word/Byte Configuration........................................................ 11
Requirements for Reading Array Data ...................................11
Page Mode Read ....................................................................12
Writing Commands/Command Sequences ............................12
Write Buffer .............................................................................12
Accelerated Program Operation .............................................12
Autoselect Functions ..............................................................12
Standby Mode........................................................................ 12
Automatic Sleep Mode ...........................................................13
RESET#: Hardware Reset Pin ...............................................13
Output Disable Mode ..............................................................13
Table 2. Am29LV640MT Top Boot Sector Architecture ..................13
Table 3. Am29LV640MB Bottom Boot Sector Architecture .............16
Autoselect Mode..................................................................... 19
Table 4. Autoselect Codes, (High Voltage Method) .......................19
Sector Group Protection and Unprotection .............................20
Table 5. Am29LV640MT Top Boot SectorProtection .....................20
Table 6. Am29LV640MB Bottom Boot SectorProtection ................20
Write Protect (WP#) ................................................................21
Temporary Sector Group Unprotect .......................................21
Figure 1. Temporary Sector Group UnprotectOperation................ 21
Figure 2. In-System Sector Group Protect/UnprotectAlgorithms... 22
Secured Silicon Sector Flash MemoryRegion .......................23
Table 7. Secured Silicon Sector Contents ......................................23
Figure 3. Secured Silicon Sector Protect Verify.............................. 24
Hardware Data Protection ......................................................24
Low VCC Write Inhibit ............................................................24
Write Pulse “Glitch” Protection ...............................................24
Logical Inhibit ..........................................................................24
Power-Up Write Inhibit ............................................................24
Common Flash Memory Interface (CFI). . . . . . . 24
Table 8. CFI Query Identification String.............................. 25
Table 9. System Interface String......................................................25
Table 10. Device Geometry Definition................................. 26
Table 11. Primary Vendor-Specific Extended Query........... 27
Command Definitions . . . . . . . . . . . . . . . . . . . . . 27
Reading Array Data ................................................................27
Reset Command .....................................................................28
Autoselect Command Sequence ............................................28
Enter Secured Silicon Sector/Exit Secured Silicon Sector
CommandSequence ..............................................................28
Word/Byte Program Command Sequence .............................28
Unlock Bypass Command Sequence .....................................29
Write Buffer Programming ......................................................29
Accelerated Program ..............................................................30
Figure 4. Write Buffer Programming Operation............................... 31
Figure 5. Program Operation.......................................................... 32
Program Suspend/Program Resume Command Sequence ...32
Figure 6. Program Suspend/Program Resume............................... 33
Chip Erase Command Sequence ...........................................33
Sector Erase Command Sequence ........................................33
Figure 7. Erase Operation.............................................................. 34
Erase Suspend/Erase Resume Commands ...........................35
Command Definitions............................................................. 36
Table 12. Command Definitions (x16 Mode, BYTE# = V
IH
)............36
Table 13. Command Definitions (x8 Mode, BYTE# = V
)...............37
Write Operation Status. . . . . . . . . . . . . . . . . . . . . 38
DQ7: Data# Polling .................................................................38
Figure 8. Data# Polling Algorithm.................................................. 38
RY/BY#: Ready/Busy#............................................................ 39
DQ6: Toggle Bit I ....................................................................39
Figure 9. Toggle Bit Algorithm........................................................ 40
DQ2: Toggle Bit II ...................................................................40
Reading Toggle Bits DQ6/DQ2 ...............................................40
DQ5: Exceeded Timing Limits ................................................41
DQ3: Sector Erase Timer .......................................................41
DQ1: Write-to-Buffer Abort .....................................................41
Table 14. Write Operation Status ...................................................41
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 42
Figure 10. Maximum Negative OvershootWaveform................... 42
Figure 11. Maximum Positive OvershootWaveform..................... 42
Operating Ranges. . . . . . . . . . . . . . . . . . . . . . . . . 42
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 43
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Figure 12. Test Setup.................................................................... 44
Table 15. Test Specifications .........................................................44
Key to Switching Waveforms. . . . . . . . . . . . . . . . 44
Figure 13. Input Waveforms and
Measurement Levels...................................................................... 44
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 45
Read-Only Operations ...........................................................45
Figure 14. Read Operation Timings............................................... 45
Figure 15. Page Read Timings...................................................... 46
Hardware Reset (RESET#) ....................................................47
Figure 16. Reset Timings............................................................... 47
Erase and Program Operations ..............................................48
Figure 17. Program Operation Timings.......................................... 49
Figure 18. Accelerated Program Timing Diagram.......................... 49
Figure 19. Chip/Sector Erase Operation Timings.......................... 50
Figure 20. Data# Polling Timings (During Embedded Algorithms). 51
Figure 21. Toggle Bit Timings (During Embedded Algorithms)...... 52
Figure 22. DQ2 vs. DQ6................................................................. 52
Temporary Sector Unprotect ..................................................53
Figure 23. Temporary Sector Group Unprotect TimingDiagram... 53
Figure 24. Sector Group Protect and Unprotect TimingDiagram.. 54
Alternate CE# Controlled Erase and ProgramOperations .....55
Figure 25. Alternate CE# Controlled Write (Erase/Program)
OperationTimings.......................................................................... 56
Erase And Programming Performance. . . . . . . . 57
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 57
TSOP Pin and BGA Package Capacitance . . . . . 58
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 59
TS 048—48-Pin Standard Pinout Thin Small Outline Package
(TSOP) ...................................................................................59
FBE063—63-Ball Fine-pitch Ball Grid Array (
F
BGA)
12x11mmPackage ..............................................................60
LAA064—64-Ball Fortified Ball Grid Array (
F
BGA)
13x11mmPackage ..............................................................61
相关PDF资料
PDF描述
AM29LV640MT110EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT110PCF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT110PCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT110REF 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
AM29LV640MT110REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Boot Sector Flash Memory
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