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参数资料
型号： AM29LV640ML101RPCI
厂商： ADVANCED MICRO DEVICES INC
元件分类： PROM
英文描述： 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
中文描述： 4M X 16 FLASH 3V PROM, 100 ns, PBGA64
封装： 13 X 11 MM, 1 MM PITCH, BGA-64
文件页数： 6/62页
文件大小： 602K
代理商： AM29LV640ML101RPCI
4
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 6
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. Device Bus Operations .....................................................10
Word/Byte Configuration ........................................................11
VersatileIO
(V
IO
) Control .....................................................11
Requirements for Reading Array Data ...................................11
Page Mode Read ....................................................................11
Writing Commands/Command Sequences ............................11
Write Buffer .............................................................................11
Accelerated Program Operation .............................................11
Autoselect Functions ..............................................................12
Standby Mode ........................................................................12
Automatic Sleep Mode ...........................................................12
RESET#: Hardware Reset Pin ...............................................12
Output Disable Mode ..............................................................12
Autoselect Mode .....................................................................16
Table 2. Autoselect Codes, (High Voltage Method) .......................16
Sector Group Protection and Unprotection .............................16
Table 3. Sector Group Protection/Unprotection AddressTable ......16
Write Protect (WP#) ................................................................18
Temporary Sector Group Unprotect .......................................18
Figure 1. Temporary Sector Group UnprotectOperation................ 18
Figure 2. In-System Sector Group
Protect/UnprotectAlgorithms.......................................................... 19
SecSi (Secured Silicon) Sector Flash MemoryRegion ..........20
Figure 3. SecSi Sector Protect Verify.............................................. 21
Hardware Data Protection ......................................................21
Low VCC Write Inhibit ............................................................21
Write Pulse “Glitch” Protection ...............................................21
Logical Inhibit ..........................................................................21
Power-Up Write Inhibit ............................................................21
Common Flash Memory Interface (CFI). . . . . . . 21
CFI Query Identification String........................................................ 22
System Interface String................................................................... 22
Table 6. Device Geometry Definition.............................................. 23
Table 7. Primary Vendor-Specific Extended Query........................ 24
Command Definitions . . . . . . . . . . . . . . . . . . . . . 24
Reading Array Data ................................................................24
Reset Command .....................................................................25
Autoselect Command Sequence ............................................25
Enter SecSi Sector/Exit SecSi Sector CommandSequence ..25
Word/Byte Program Command Sequence .............................25
Unlock Bypass Command Sequence .....................................26
Write Buffer Programming ......................................................26
Accelerated Program ..............................................................27
Figure 4. Write Buffer Programming Operation............................... 28
Figure 5. Program Operation.......................................................... 29
Program Suspend/Program Resume Command Sequence ...29
Figure 6. Program Suspend/Program Resume............................... 30
Chip Erase Command Sequence ...........................................30
Sector Erase Command Sequence ........................................30
Figure 7. Erase Operation............................................................... 31
Erase Suspend/Erase Resume Commands ...........................32
Command Definitions .............................................................33
Command Definitions (x16 Mode, BYTE# = V
IH
)............................ 33
Command Definitions (x8 Mode, BYTE# = V
IL
)............................... 34
Write Operation Status . . . . . . . . . . . . . . . . . . . . 35
DQ7: Data# Polling .................................................................35
Figure 8. Data# Polling Algorithm.................................................. 36
RY/BY#: Ready/Busy# ............................................................37
DQ6: Toggle Bit I ....................................................................37
Figure 9. Toggle Bit Algorithm........................................................ 38
DQ2: Toggle Bit II ...................................................................38
Reading Toggle Bits DQ6/DQ2 ...............................................39
DQ5: Exceeded Timing Limits ................................................39
DQ3: Sector Erase Timer .......................................................39
DQ1: Write-to-Buffer Abort .....................................................39
Table 10. Write Operation Status ...................................................40
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 41
Figure 10. Maximum Negative OvershootWaveform.................... 41
Figure 11. Maximum Positive
Overshoot Waveform..................................................................... 41
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 41
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 42
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 12. Test Setup..................................................................... 43
Table 1. Test Specifications ...........................................................43
Key to Switching Waveforms. . . . . . . . . . . . . . . . 43
Figure 13. Input Waveforms and
Measurement Levels...................................................................... 43
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 44
Read-Only Operations ...........................................................44
Figure 14. Read Operation Timings............................................... 44
Figure 15. Page Read Timings...................................................... 45
Hardware Reset (RESET#) ....................................................46
Figure 16. Reset Timings............................................................... 46
Erase and Program Operations ..............................................47
Figure 17. Program Operation Timings.......................................... 48
Figure 18. Accelerated Program Timing Diagram.......................... 48
Figure 19. Chip/Sector Erase Operation Timings.......................... 49
Figure 20. Data# Polling Timings
(During Embedded Algorithms)...................................................... 50
Figure 21. Toggle Bit Timings (During Embedded Algorithms)...... 51
Figure 22. DQ2 vs. DQ6................................................................. 51
Temporary Sector Unprotect ..................................................52
Figure 23. Temporary Sector Group Unprotect TimingDiagram... 52
Figure 24. Sector Group Protect and UnprotectTimingDiagram.. 53
Alternate CE# Controlled Erase and ProgramOperations .....54
Figure 25. Alternate CE# Controlled Write (Erase/Program)
OperationTimings.......................................................................... 55
Erase And Programming Performance . . . . . . . 56
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 56
TSOP Pin and BGA Package Capacitance . . . . . 56
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 57
TS056/TSR056—56-Pin Standard and Reverse Pinout
Thin Small Outline Package (TSOP) ......................................57
LAA064—64-Ball Fortified Ball Grid Array (
F
BGA) 13 x 11 mm
Package ..................................................................................58
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 59
相关PDF资料
PDF描述
AM29LV640ML112EI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112FI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112PCI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112REI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
AM29LV640ML112RFI 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control
相关代理商/技术参数
参数描述
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