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| 型号： | AM29LV640ML120REI |
| 厂商： | ADVANCED MICRO DEVICES INC |
| 元件分类： | PROM |
| 英文描述： | 64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit⑩ 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O⑩ Control |
| 中文描述： | 4M X 16 FLASH 3V PROM, 120 ns, PDSO56 |
| 封装： | MO-142, TSOP-56 |
| 文件页数： | 12/62页 |
| 文件大小： | 602K |
| 代理商： | AM29LV640ML120REI |
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10
Am29LV640MH/L
December 14, 2005
D A T A S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory loca-
tion. The register is a latch used to store the com-
mands, along with the address and data information
needed to execute the command. The contents of the
register serve as inputs to the internal state machine.
The state machine outputs dictate the function of the
device.
Table 1
lists the device bus operations, the in-
puts and control levels they require, and the resulting
output. The following subsections describe each of
these operations in further detail.
Table 1.
Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 11.5–12.5
V, V
HH
= 11.5–12.5
V, X = Don’t Care, SA = Sector Address,
A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are A21:A0 in word mode; A21:A-1 in byte
mode. Sector addresses are A21:A15 in both modes.
2. The sector protect and sector unprotect functions may also
be implemented via programming equipment. See the
“Sector Group Protection and Unprotection” section.
3. If WP# = V
IL
, the first or last sector remains protected. If
WP# = V
IH
, the first or last sector will be protected or
unprotected as determined by the method described in
“Sector Group Protection and Unprotection”. All sectors are
unprotected when shipped from the factory (The SecSi
Sector may be factory protected depending on version
ordered.)
4. D
IN
or D
OUT
as required by command sequence, data
polling, or sector protect algorithm (see Figure 2).
Operation
CE#
L
L
L
V
CC
±
0.3 V
L
X
OE#
L
H
H
WE# RESET#
H
L
L
WP#
X
(Note 3)
(Note 3)
ACC
X
X
V
HH
Addresses
(Note 2)
A
IN
A
IN
A
IN
DQ0–
DQ7
D
OUT
(Note 4) (Note 4)
(Note 4) (Note 4)
DQ8–DQ15
BYTE#
= V
IH
D
OUT
BYTE#
= V
IL
DQ8–DQ14
= High-Z,
DQ15 = A-1
Read
Write (Program/Erase)
Accelerated Program
H
H
H
Standby
X
X
V
CC
±
0.3 V
H
L
X
H
X
High-Z
High-Z
High-Z
Output Disable
Reset
H
X
H
X
X
X
X
X
X
X
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
V
ID
H
X
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note 4)
X
X
Sector Group Unprotect
(Note 2)
L
H
L
V
ID
H
X
(Note 4)
X
X
Temporary Sector
Group Unprotect
X
X
X
V
ID
H
X
A
IN
(Note 4) (Note 4)
High-Z
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