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参数资料
| 型号： | AM55-0015TR |
| 元件分类： | 放大器 |
| 英文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | PLASTIC, QSOP-28 |
| 文件页数： | 6/8页 |
| 文件大小： | 177K |
| 代理商： | AM55-0015TR |
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Specifications subject to change without notice.
Visit www.macom.com for additional data sheets and product information.
V 2.0
6
250 mW Power Amplifier with T/R Switch, 2.4 - 2.5 GHz
AM55-0015
Recommended PCB Configuration
The AM55-0015 requires that VGG bias be applied prior to any
VDD bias. Permanent damage may occur if this procedure is
not followed, since FETs in the Power Amplifier will draw
excessive current and damage internal circuitry.
Biasing Procedure
External Circuitry Parts List
1
Layout View
Cross Section View
Part
Value
Purpose
C1-C3
22 pF
DC Block
C4-C6
22 pF
Bypass
C7-C14
1000 pF
Bypass
C15-C18
0.01
F
Bypass
R1
820
FET Gate Bias Network
R2, R3
680
FET Gate Bias Network
R4
120
FET Gate Bias Network
R5, R6
3 k
FET Gate Bias Network
CR1
1N4148
FET Gate Bias Network
The PCB dielectric between RF traces and RF ground layers
should be chosen to reduce RF discontinuities between 50
lines and package pins.
M/A-COM recommends an RF-4
dielectric thickness of 0.008” (0.2 mm) yielding a 50
line
width of 0.015” (0.38 mm). The recommended metalization
thickness is 1 ounce copper.
1. All external circuitry parts are readily available, low cost surface
mount components (0.060 inch x 0.030 inch or 0.080 inch x
0.050 inch).
External Circuitry
R1
R4
R2
R5
R3
R6
C12
C1
C9
C6
C8
C5
C11
C7
C4
C10
C3
C2
C13
C14
0.690 in.
0.975 in.
0.625 in.
PIN #1
RF Traces + Components
RF Ground
DC Routing
Customer Defined
1
2
3
4
5
6
7
8
9
19
18
17
16
15
10
11
12
13
14
24
23
22
21
20
28
27
26
25
C3
C10
R6
R3
C4
C7
C11
R5
R2
1N4148
C1
R4
R1
C12
C6
C9
C5
C8
C2
C14
C15
C16
C17
C13
C18
RX OUT
VDD1
VDD2
VGG
VDD3
RF IN
RF OUT
VDD
T/R CTRL
T/R
相关PDF资料 |
PDF描述 |
|---|---|
| AM55-0015 | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| AM55-0023RTR | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AM55-0023TR | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AM55-0023 | 800 MHz - 2000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AM55-0027TR | 1940 MHz - 2340 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AM55-0016 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Switched Low Noise Amplifier 800 - 1000 MHz |
| AM55-0016_1 | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Switched Low Noise Amplifier 800 - 1000 MHz |
| AM55-0016RTR | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Switched Low Noise Amplifier 800 - 1000 MHz |
| AM55-0016SMB | 制造商:MA-COM 制造商全称:M/A-COM Technology Solutions, Inc. 功能描述:Switched Low Noise Amplifier 800 - 1000 MHz |
| AM55-0016TR | 制造商:M/A-COM Technology Solutions 功能描述:RF AMP CHIP SGL GP 1GHZ 5V 8MSOP - Tape and Reel |
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