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参数资料
| 型号： | AM81214-060 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 60K |
| 代理商： | AM81214-060 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. D
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 20 mA
55
V
BVCER
IC = 40 mA
RBE = 10
55
V
BVEBO
IE = 2 mA
3.5
V
ICES
VCE = 28 V
10
mA
hFE
VCE = 5.0 V
IC = 2.0 A
15
150
---
PG
η
C
VCC = 28 V
POUT = 55 W
f = 1.2 to 1.4 GHz
6.6
50
dB
%
NPN SILICON RF POWER TRANSISTOR
AM81214-060
DESCRIPTION:
The
ASI AM81214-060 is Designed for
1200 – 1400 MHz, L-Band Applications.
FEATURES:
Internal Input/Output Matching Network
P
G = 6.6 dB at 55 W/1400 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
5.0 A
VCC
32 V
PDISS
107 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θ
JC
1.4 °C/W
PACKAGE STYLE .400 2L FLG
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