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参数资料
| 型号： | AM82223-018 |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 X 0.400 INCH, HERMETIC SEALED, METAL CERAMIC, M214, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 213K |
| 代理商： | AM82223-018 |
AM82223-018
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The AM82223-018 is a common base, silicon NPN bipolar transistor
designed for high gain and efficiency in hi-rel aerospace telemetry
applications in the 2.2-2.3 GHz frequency range.
It incorporates internal input and output impedance matching
structures along with a rugged, emitter-site ballasted overlay die
geometry capable of withstanding
∞
∞:1 load mismatch at any phase
angle under full rated operating conditions..
The AM82223-018 is provided in the industry-standard AMPAC
metal/ceramic hermetic package.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation
58.3
W
IC
Device Current*
3.0
A
VCC
Collector-Supply Voltage*
28
V
TJ
Junction Temperature
200
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
3.0
°°C/W
Features
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞∞:1 VSWR CAPABILITY AT RATED CONDITIONS
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P
OUT = 18 W MINIMUM WITH GP = 6.5 dB GAIN MINIMUM
COMMON BASE CONFIGURATION
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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