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参数资料
| 型号： | AM82731 |
| 厂商： | ADVANCED SEMICONDUCTOR INC |
| 元件分类： | 功率晶体管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封装： | 0.400 INCH, FM-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 52K |
| 代理商： | AM82731 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25
OC
SYMBOL
TEST CONDITIONS
MINIMUM
TYPICAL MAXIMUM
UNITS
BVCBO
IC = 2.0 mA
50
V
BVCER
IC = 2.0 mA
50
V
ICES
VCE = 2.0 mA
2.0
mA
BVEBO
IE = 1.0 mA
3.5
V
hFE
VCE = 5 V
IC = 200 mA
10
---
PG
η
C
VCE = 30 V
POUT = 3.0 W
f = 2700 to 3100 MHz
Pulse Width = 100
S
Duty Cycle = 10%
5.7
6.5
35
dB
%
NPN RF POWER TRANSISTOR
AM82731
DESCRIPTION:
The
AM82731 is a Common Base
Device Designed for Pulsed S-Band
Radar Amplifier Applications.
FEATURES INCLUDE:
Input/Output Matching
Gold Metallization
Emitter Ballasting
MAXIMUM RATINGS
IC
0.9 A
VCBO
50 V
PDISS
27 W @ TC = 25
OC
TJ
-55
OC to+200 OC
TSTG
-55
OC to+200 OC
θ
JC
6.5
OC/W
PACKAGE STYLE 400 2L FLG
1 = COLLECTOR
2 & 4 = BASE
3 = EMITTER
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AM82731-001 | 制造商:ASI 制造商全称:ASI 功能描述:NPN RF POWER TRANSISTOR |
| AM82731-003 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| AM82731-006 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| AM82731-012 | 制造商:ASI 制造商全称:ASI 功能描述:NPN RF POWER TRANSISTOR |
| AM82731-025 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
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