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参数资料
| 型号： | AMB0480xxRJ8 |
| 厂商： | Integrated Device Technology, Inc. |
| 英文描述： | ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM MODULES |
| 中文描述： | 高级内存缓冲的全缓冲DIMM模块 |
| 文件页数： | 13/15页 |
| 文件大小： | 264K |
| 代理商： | AMB0480XXRJ8 |
13
IDTAMB0480
ADVANCED MEMORY BUFFER FOR FULLY BUFFERED DIMM
COMMERCIAL TEMPERATURE RANGE
DDR BIAS
PLL AND CHANNEL BIAS
AMB0480
DDRC_B18
DDRC_C14
DDRC_C18
V
DD
V
SS
R
C
12
R
B
12
DDRC_C12
DDRC_B12
R
B
18
R
C
18
AMB0480
V
CC
V
SS
C
1
C
2
V
SS
APLL
V
CCFBD
R
FBDRES
FBDRES
V
CC
APLL
PLLTSTO
R
PLLTST
R
L
NOTES:
1. Refer to JEDEC PC2-4200/5300/6400 DDR2 FULLY BUFFERED DIMMDESIGN SPECIFICATIONS, rev 2.0.
2. The resistor R must be 0
Ω
and the inductor L needs to be replaced with a 0
Ω
resistor. The resistor R
FBDRES
= 100
Ω
and Resistor R
PLLTST
= 51
Ω
.
3. It is not recommended to use a serpentine copper trace in place of the resistor R. This resistor value needs to be AMB manufacturer defined and not set to a single fixed value.
Some raw cards have implemented the resistor with a serpentine copper trace on the DIMMPCB, while others use a discrete resistor. The limtation of using the copper trace
has been discussed in JEDEC, highlighting that the resistor implemented as a serpentine copper trace is not a generic solution. The raw card artwork now allows the option of
bypassing any serpentine trace with a 0
Ω
resistor to V
CC
.
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相关代理商/技术参数 |
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