参数资料
型号: AMIS41682CANM1G
厂商: ON Semiconductor
文件页数: 15/16页
文件大小: 0K
描述: TRANSCEIVER CAN 3.3V DGTL 14SOIC
标准包装: 55
类型: 收发器
驱动器/接收器数: 1/1
规程: CAN
电源电压: 4.75 V ~ 5.25 V
安装类型: 表面贴装
封装/外壳: 14-SOIC(0.154",3.90mm 宽)
供应商设备封装: 14-SOICN
包装: 管件
产品目录页面: 1115 (CN2011-ZH PDF)
其它名称: 766-1016
AMIS41682, AMIS41683
http://onsemi.com
8
ELECTRICAL CHARACTERISTICS
Definitions
All voltages are referenced to GND (Pin 13). Positive
currents flow into the IC. Sinking current means that the
current is flowing into the pin. Sourcing current means that
the current is flowing out of the pin.
Table 5. CHARACTERISTICS AMIS4168x VCC = 4.75 V to 5.25 V, VBAT = 5 V to 36 V, TJ = 40°C to +150°C; unless otherwise
specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLIES VCC VBAT
ICC
Supply Current
Normal Operating Mode;
VTXD = VCC (Recessive)
1
3.7
6.3
mA
Normal Operating Mode;
VTXD = 0 V (Dominant); No Load
1
8
12
mA
FLAG_VCC
Forced Low Power Mode
VCC Rising
VCC Falling
2.45
4.5
V
IBAT
Battery Current on Pin BAT
In All Modes of Operation;
500 V between RTL CANL
500 V between RTH CANH
VBAT = WAKE = INH = 5 V to 36 V
10
110
230
mA
In Sleepmode
VCC = 0 V, VBAT = 12.5 V
TA = 70°C
35
42
mA
ICC+ IBAT
Supply Current Plus Battery Current
Low power modes; VCC = 5 V;
TA = 40°C to 100°C
VBAT = WAKE = INH = 5 to 36V
30
60
mA
ICC+ IBAT
Supply Current Plus Battery Current
Low power modes; VCC = 5 V;
TA = 100°C to 150°C
VBAT = WAKE = INH = 5 V to 36 V
80
mA
FLAG_VBAT
Poweron FlagLevel for Pin VBAT
For Setting Poweron Flag
For Not Setting Poweron Flag
3.5
2.1
2.4
1
V
PINS STB, EN AND TXD
RPD
Pulldown Resistor at Pin EN and STB
1 V
190
360
600
kW
TDisTxD
Dominant Timeout for TxD
Normal Mode; VtxD = 0 V
0.75
4
ms
TGoToSleep
Minimum HoldTime for GoToSleep
Mode
5
50
ms
PIN WAKE
IIL
LowLevel Input Current
VWAKE = 0 V; VBAT = 27V
10
1
mA
Vth(WAKE)
Wakeup Threshold Voltage
VSTB = 0 V
2.5
3.2
3.9
V
TWakeMin
Minimum Time on Pin Wake (De-
bounce Time)
VBAT = 12 V; Low Power Mode; for
Rising and Falling Edge
7
38
ms
PIN INH
DVH
HighLevel Voltage Drop
IINH = $0.18 mA
0.8
V
Ileak
Leakage Current
Sleep mode; VINH = 0 V
1
mA
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