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参数资料
型号： AMMC-5024-W10
厂商： AGILENT TECHNOLOGIES INC
元件分类： 放大器
英文描述： 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： 0.0925 X 0.0413 INCH, 0.004 INCH HEIGHT, DIE
文件页数： 3/10页
文件大小： 244K
代理商： AMMC-5024-W10
2
AMMC-5024 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
dss
Saturated Drain Current (V
dd=7 V, Vg1 =0 V, Vg2 =open circuit)
mA
250
304
350
V
p
First Gate Pinch-off Voltage (V
dd=7 V, Idd= 30 mA, Vg2 = open circuit)
V
-8.2
Vg2
Second Gate Self-bias Voltage (Vdd=7 V, Idd = 200 mA, Vg2=open circuit)
V
2.75
Idsmin
First Gate Minimum Drain Current
mA
47
68
(Vg1)(Vdd=7 V, Vg1= -7 V, Vg2=open circuit)
Idsmin
Second Gate Minimum Drain Current
mA
105
128
(V
g2)(Vdd =7 V, Vg1 =0 V, Vg2 = -3.5 V)
θ
ch-b
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
°C/W
52
RF Specifications for High Power Applications[3,4] (Vdd=7 V, Idd(Q)=200 mA, Zin=Zo=50
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S
21|
2
Small-signal Gain
dB
14
16
18
|S
21|
2
Small-signal Gain Flatness
dB
±0.75
±1.5
RLin
Input Return Loss
dB
12
16.9
RLout
Output Return Loss
dB
10
16.8
|S
12|
2
Isolation
dB
26
28
P
-1dB
Output Power @ 1 dB Gain Compression
f = 22 GHz
dBm
21
22.5
Psat
Saturated Output Power
f = 22 GHz
dBm
23
24.5
OIP3
Output 3rd Order Intercept Point,
dBm
27
30
Rfin1 = Rfin2 = 2 dBm, f = 22 GHz, f = 2 MHz
NF
Noise Figure (Vds = 3V, Ids = 140 mA)
f = 26 GHz
dB
4.6
6.5
f = 40 GHz
dB
7.2
9
RF Specifications for High Gain and Low Power Applications[3,4] (V
dd=4 V, Idd(Q)= 160 mA, Zin=Zo=50
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
|S21|
2
Small-signal Gain
dB
17.5
|S
21|
2
Small-signal Gain Flatness
dB
±1.5
RL
in
Minimum Input Return Loss
dB
13
RL
out
Minimum Output Return Loss
dB
13
|S12|
2
Isolation
dB
30
P-1dB
Output Power @ 1 dB Gain Compression
f = 22 GHz
dBm
17.3
Psat
Saturated Output Power
f = 22 GHz
dBm
20.5
OIP3
Output 3rd Order Intercept Point,
dBm
22.5
Rfin1 = Rfin2 = 2 dBm, f = 22 GHz, f = 2 MHz
NF
Noise Figure
f = 26 GHz
dB
3.7
f = 40 GHz
dB
5.5
Notes:
1. Backside temperature Tb = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (
θ
ch-b) = 61°C/W at Tchannel (Tc) = 150°C as measured using the liquid crystal method. Thermal Resistance at
backside temperature (T
b) = 25°C calculated from measured data.
3. Data measured in wafer form, Tchuck = 25°C
4. 100% on-wafer RF test is done at frequency = 2, 10, 20, 30 and 40 GHz, except as noted.
相关PDF资料
PDF描述
AMMC-5024-W50 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5024-W10 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-5024 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-5024 0.03 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMC-5026 2000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
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