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参数资料
| 型号： | AMMC-5040-W10 |
| 元件分类： | 放大器 |
| 英文描述： | 20000 MHz - 45000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 0.0677 X 0.0299 INCH, 0.004 INCH HEIGHT, DIE |
| 文件页数： | 3/10页 |
| 文件大小： | 279K |
| 代理商： | AMMC-5040-W10 |
2
Absolute Maximum Ratings [1,2,3,4,5]
Symbol
Parameters
Units
Minimum Values
Maximum Values
Notes
V
d-Vg
Drain to Gate Voltage
V
8
V
d
Positive Supply Voltage [2]
V
5
I
DD
Total Drain Current [2]
mA
550
2
V
g
Gate Supply Voltage
V
-3
0.5
P
D
Power Dissipation [2,3]
W
2.09
2 and 3
P
in
CW Input Power [2]
dBm
21
2
T
ch
Operating Channel Temp [4,5]
°C
+150
4,5
T
stg
Storage Case Temp.
°C
-65 to +150
T
max
Maximum Assembly Temp (30 sec max)
°C
+300
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations may significantly reduce the lifetime of the device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operated at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specifications/Physical Properties [6]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
V
D1,2-3-4
Drain Supply Operating Voltage
V
2
4.5
5
I
D1
First Stage Drain Supply Current
(V
DD = 4.5 V, VG1 = -0.5 V)
mA
50
I
D2-3-4
Total Drain Supply Current for Stages 2, 3 and 4
(V
DD = 4.5 V, VGG= -0.5 V)
mA
225
V
G1,2-3-4
Gate Supply Operating Voltages (I
DD = 300 mA)
V
-0.45
V
P
Pinch-off Voltage (V
DD = 4.5 V, IDD < 10 mA)
V
-1.5
θ
ch-b
Thermal Resistance[2] (Channel-to-Backside)
°C/W
31
Notes:
6. Measured in wafer form with T
chuck = 25°C (except θ ch-bs.)
7. Assume conductive epoxy to an evaluation RF board at 85°C base plate temperature.
Thermal Properties
Parameters
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 85°C
P
D = 2.09W
Tchannel = 150°C
Thermal Resistance (θjc)
Vd = 4.5V
Idd = 300mA
P
D = 1.35W
Tbaseplate = 85°C
θjc = 31°C/W
Tchannel = 126.85°C
Thermal Resistance (θjc)
Under RF Drive
Vd = 4.5V
Idd = 306mA
Pout = 22dBm
P
D = 1/22W
Tbaseplate = 85°C
θjc = 31°C/W
Tchannel = 123°C
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