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参数资料
| 型号： | AMMC-6140-W10 |
| 元件分类： | 倍频器 |
| 英文描述： | 10000 MHz - 20000 MHz RF/MICROWAVE FREQUENCY DOUBLER |
| 封装： | DIE |
| 文件页数： | 2/6页 |
| 文件大小： | 405K |
| 代理商： | AMMC-6140-W10 |
2
AMMC-6140 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
I
d
Drain Supply Current (under any RF power drive and temperature) (V
d= 4.5V)
mA
27
40
V
g
Gate Supply Operating Voltage
V
-1.5
-1.2
-1.0
θ
ch-b
Thermal Resistance[2] (Backside Temp. T
b = 25°C)
°C/W
25
Notes:
1. Ambient operational temperature T
A= 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θ
ch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (T
b) = 25°C calculated from measured data.
RF Specifications[3,4,5] (T
A = 25°C, Vd = 4.5 V, Id(Q)= 27 mA, Z0 = 50Ω)
Symbol
Parameters and Test Conditions
Units
Minimum
Typical
Sigma
Fin
Input Frequency
GHz
10 to 20
Fout
Output Frequency
GHz
20 to 40
Po
Output Power[6]
dBm
-2
-1
0.4
Fo
Fundamental Isolation (referenced to Po): 20–36 GHz
dBc
20
30
5.0
36–40 GHz
dBc
14
16
1.0
3Fo
3rd Harmonic Isolation (referenced to Po)
dBc
25
1.2
P
-1dB
Output Power at 1dB Gain Compression
dBm
+5
RLin
Input Return Loss[6]
dB
-15
RLout
Output Return Loss[6]
dB
-10
SSB
Single Sideband Phase Noise (100 KHz offset)
dBc/Hz
-135
Notes:
3. Small/large signal data measured in wafer form T
A = 25°C.
4. 100% on-wafer RF test is done at Pin = +4 dBm and output frequency = 20, 28, 36 and 40 GHz.
5. Specifications are derived from measurements in a 50Ω test environment. Aspects of the multiplier performance may be improved over a nar-
rower bandwidth by application of additional matching.
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
hh
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
h
Typical distribution of Pout, 2nd Harmonic and 3rd Harmonic Suppression (Fin=14 GHz).
Based on 2500 parts sampled over several production lots.
2Fo Pout (dBm) @ 28G Hz
Fo Suppression (dBm) @ 14 GHz
3Fo Suppression (dBm) @ 42 GHz
-2
-1
hh
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PDF描述 |
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| AMMC-6140-W50 | 10000 MHz - 20000 MHz RF/MICROWAVE FREQUENCY DOUBLER |
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相关代理商/技术参数 |
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|---|---|
| AMMC-6140-W50 | 功能描述:射频无线杂项 Doubler MMIC 6-40GHz RoHS:否 制造商:Texas Instruments 工作频率:112 kHz to 205 kHz 电源电压-最大:3.6 V 电源电压-最小:3 V 电源电流:8 mA 最大功率耗散: 工作温度范围:- 40 C to + 110 C 封装 / 箱体:VQFN-48 封装:Reel |
| AMMC-6220 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:6 - 20 GHz Low Noise Amplifier |
| AMMC-6220-W10 | 功能描述:射频放大器 LNA MMIC 6-18GHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-6220-W50 | 功能描述:射频放大器 LNA MMIC 6-18GHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMC-6222 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:7 to 21 GHz GaAs High Linearity Low Noise Amplifier |
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