参数资料
型号: AMMC-6241-W10
元件分类: 放大器
英文描述: 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 0.0748 X 0.0315 INCH, 0.004 INCH HEIGHT, DIE
文件页数: 2/8页
文件大小: 510K
代理商: AMMC-6241-W10
2
AMMC-6241 DC Specifications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units Min.
Typ.
Max.
Id
Drain Supply Current (under any RF power drive and temperature) (Vd=3.0 V)
mA
60
80
qch-b
Thermal Resistance[2] (Backside temperature, Tb = 25°C)
°C/W
25
AMMC-6241 RF Specifications [3, 4, 5]
TA= 25°C, Vd=3.0 V, Id(Q)=60 mA, Zin=Zo=50
Symbol
Parameters andTest Conditions
Units Minimum
Typical
Maximum
Sigma
Gain
Small-signal Gain[6]
dB
26-35 GHz = 20
35-40 GHz = 18.5
26-37 GHz = 21
37-40 GHz = 19.5
1.0
NF
Noise Figure into 50W
dB
26-37 GHz = 2.7
37-40 GHz = 3.0
26-37 GHz = 3.0
37-40 GHz = 3.3
0.05
P-1dB
Output Power at 1dBGain Com-
pression
dBm
+10
OIP3
Third Order Intercept Point;
Df=100MHz; Pin=-35dBm
dBm
+20
RLin
Input Return Loss[6]
dB
-13
-11
0.40
RLout
Output Return Loss[6]
dB
-16
-12
0.50
Isol
Reverse Isolation[6]
dB
-40
0.50
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency =30, 32, and 38 GHz.
5. Specifications are derived from measurements in a 50 test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Gopt) matching.
6. As derived from measured s-parameters
Noise Figure at 32 GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
Gain at 38 GHz
Noise Figure at 38GHz
LSL
19
20
USL
2.6
2.7
2.8
2.9
USL
2.8
2.9
3
3.1
3.2
3.3
相关PDF资料
PDF描述
AMMC-6241-W50 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
AMMP-6442-TR1 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMP-6442-TR2 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AS006L2-00 0 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.2 dB INSERTION LOSS
AS006L2-93 0.3 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.8 dB INSERTION LOSS
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