参数资料
型号: AMMC-6241-W50
元件分类: 放大器
英文描述: 26000 MHz - 43000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 0.0748 X 0.0315 INCH, 0.004 INCH HEIGHT, DIE
文件页数: 7/8页
文件大小: 510K
代理商: AMMC-6241-W50
7
Biasing and Operation
The AMMC-6241 is normally biased with a positive sup-
ply connected to both VD1 and VD2 bond pads through
the 100pF bypass capacitor as shown in Figure 21. The
recommended supply voltage is 3 V. It is important to
place the bypass capacitor as close to the die as possible.
No negative gate bias voltage is needed for the AMMC-
6241. Input and output matching are achieved on-die,
therefore no other external component is required
besides one 100pF bypass capacitor for the main sup-
ply. The input and output are DC-blocked with internal
coupling capacitors.
No ground wires are needed because all ground connec-
tions are made with plated through-holes to the backside
of the device.
Refer the Absolute Maximum Ratings table for allowed
DC and thermal conditions.
Assembly Techniques
The backside of the MMIC chip is RF ground. For mi-
crostrip applications the chip should be attached directly
to the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1,2].
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding
it. This can be accomplished by mounting a gold plate
metal shim (same length and width as the MMIC) under
the chip which is of correct thickness to make the chip
and adjacent circuit the same height. The amount of
epoxy used for the chip and/or shim attachment should
be just enough to provide a thin fillet around the bottom
perimeter of the chip or shim. The ground plan should
be free of any residue that may jeopardize electrical or
mechanical attachment.
The location of the RF bond pads is shown in Figure
12. Note that all the RF input and output ports are in a
Ground-Signal-Ground configuration.
RF connections should be kept as short as reasonable
to minimize performance degradation due to undesir-
able series inductance. A single bond wire is normally
sufficient for signal connections, however double bond-
ing with 0.7 mil gold wire or use of gold mesh is recom-
mended for best performance, especially near the high
end of the frequency band.
Thermosonic wedge bonding is preferred method for
wire attachment to the bond pads. Gold mesh can be at-
tached using a 2 mil round tracking tool and a tool force
of approximately 22 grams and a ultrasonic power of
roughly 55 dB for a duration of 76 +/- 8 mS. The guided
wedge at an untrasonic power level of 64 dB can be used
for 0.7 mil wire. The recommended wire bond stage tem-
perature is 150 +/- 2C.
Caution should be taken to not exceed the Absolute
Maximum
Notes:
1. Ablebond 84-1 LM1 silver epoxy is recommended.
2. Eutectic attach is not recommended and may jeopardize reliability
of the device.
Figure 18. AMMC-6241 Simplified Schematic
RFout
RFin
VD1
VD2
相关PDF资料
PDF描述
AMMP-6442-TR1 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMP-6442-TR2 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AS006L2-00 0 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.2 dB INSERTION LOSS
AS006L2-93 0.3 MHz - 6000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.8 dB INSERTION LOSS
AS186-302 0 MHz - 4000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.25 dB INSERTION LOSS
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