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参数资料
| 型号： | AMMC-6408-W50 |
| 元件分类： | 放大器 |
| 英文描述： | 6000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 2 X 2 MM, ROHS COMPLIANT, DIE-10 |
| 文件页数： | 5/12页 |
| 文件大小： | 276K |
| 代理商： | AMMC-6408-W50 |
2
Absolute Maximum Ratings
Symbols
Parameters
Units
Minimum
Maximum
Notes
Vd-Vg
Drain to Gate Voltage
V
8
Vd
Positive Supply Voltage
V
5.5
Vg
Gate Supply Voltage
V
-2.5
0.5
Id
Drain Current
mA
TBD
2
PD
Power Dissipation
W
3.5
2 and 3
Pin
CW Input Power
dBm
20
2
Tch
Operating Channel Temp
qC
+150
4
Tstg
Storage Case Temp.
qC
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
qC
+320
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations will signicantly reduce the lifetime of the device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85
qC, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly aect the device MTTF. For maximum life, it is
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
DC Specications/ Physical Properties
Symbol
Parameters and Test Conditions
Units
Value
Idq
Drain Supply Current
(Vdd=5 V, Vg set for Id Typical)
mA
650
Vg
Gate Supply Operating Voltage
(Id(Q) = 650 (mA))
V
-1.1
Rθjc
Thermal Resistance[6]
(Channel-to-Base Plate)
°C/W
22
Tch
Channel Temperature
°C
150.6
Notes:
6. Channel-to-backside Thermal Resistance (θch-b) = 10°C/W at Tchannel (Tc) = 107°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 85°C
PD = 3.5W
Tchannel = 150°C
Thermal Resistance (
Tjc)
Vd = 5V
Id = 650mA
PD = 3.25W
Tbaseplate = 75°C
Tjc = 22°C/W
Tchannel = 146°C
Thermal Resistance (
Tjc)
Under RF Drive
Vd = 5V
Id = 810mA
Pout = 29dBm
Pd = 3.3W
Tbaseplate = 85°C
Tjc = 22°C/W
Tchannel = 147°C
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