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参数资料
型号： AMMC-6440-W10
元件分类： 放大器
英文描述： 37000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封装： 0.100 X 0.069 INCH, DIE-9
文件页数： 2/8页
文件大小： 198K
代理商： AMMC-6440-W10
2
Absolute Maximum Ratings [AMMC-6440]
Symbols
Parameters
Units
Min.
Max.
Notes
Vd-Vg
Drain to Gate Voltage
V
8
Vd
Positive Supply Voltage
V
5.5
Vg
Gate Supply Voltage
V
-2.5
0.5
Id
Drain Current
mA
TBD
2
PD
Power Dissipation
W
5.5
2, 3
Pin
CW Input Power
dBm
20
2
Tch
Operating Channel Temp
qC
+150
4
Tstg
Storage Case Temp.
qC
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
qC
+320
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations will signicantly reduce the lifetime of the device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85
qC, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly aect the device MTTF.
For maximum life, it is recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Channel tem-
perature Table
AMMC-6440 DC Specications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current
(under any RF power drive and temperature)
(Vd=5.5 V, Vg set for Id Typical)
mA
950
1050
Vg
Gate Supply Operating Voltage
(Id(Q) = 950 (mA))
V
-0.85
-0.7
-0.65
qch-b
Thermal Resistance [2]
(Backside temperature, Tb = 25°C)
°C/W
6.4
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (θch-b) = 9.0°C/W at Tchannel (Tc) = 70°C as measured using infrared microscopy. Thermal Resistance
at backside temperature (Tb) = 25°C calculated from measured data.
Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 85°C
PD = 5.5W
Tchannel = 150°C
Thermal Resistance (
Tjc)
Vd = 5.5V
Id = 950mA
PD = 5.23W
Tbaseplate = 85°C
Tjc = 6.4°C/W
Tchannel = 118°C
Thermal Resistance (
Tjc)
Under RF Drive
Vd = 5.5V
Id = 1095mA
Pout = 28dBm
Pd = 5.43W
Tbaseplate = 85°C
Tjc = 6.4°C/W
Tchannel = 120°C
相关PDF资料
PDF描述
AMMC-6440 37000 MHz - 42000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6442-W10 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6442-W50 37000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
AMMC-6545-W10 18000 MHz - 45000 MHz RF/MICROWAVE SINGLE BALANCED MIXER, 12 dB CONVERSION LOSS-MAX
AMMC-6545-W50 18000 MHz - 45000 MHz RF/MICROWAVE SINGLE BALANCED MIXER, 12 dB CONVERSION LOSS-MAX
相关代理商/技术参数
参数描述
AMMC-6440-W50 功能描述:射频放大器 Amp MMIC 37-42GHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
AMMC-6442-W10 功能描述:射频放大器 Amp MMIC 35-40GHz Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
AMMC-6442-W50 功能描述:射频放大器 Amp MMIC 35-40GHz Linear Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel
AMMC-6522-W50 制造商:Avago Technologies 功能描述:LNA IR MIXER 6-22GHZ - Gel-pak, waffle pack, wafer, diced wafer on film
AMMC-6530-W10 功能描述:射频混合器 Mixer MMIC 6-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube
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