参数资料
型号: AMMC-6650-W10
元件分类: 衰减器
英文描述: 0 MHz - 40000 MHz RF/MICROWAVE VARIABLE ATTENUATOR
封装: 1.53 X 6.60 MM, DIE-6
文件页数: 9/10页
文件大小: 198K
代理商: AMMC-6650-W10
8
Attenuation is controlled by applying voltage to pins V1
and V2 as shown in Figure 13.
Figure 13. Bias voltage connections
Figure 14. AMMC-6650 and the op-amp driver circuit
Biasing considerations
For the minimum attenuation, V1 is set to 1.5 V and V2 is
set to 0 V. The 1.5 V applied to the V1 pin biases the series
FETs to a full “on” state, while the 0 V applied to the V2
pin keeps the shunt FETs in an “off” or “open” state; thus
creating the lumped element 50
transmission line
effect. The V2 voltage swing from 0 V to 1.25 V increases
the level of attenuation. The V1 voltage swing from 1.5 V
to 0 V effectively optimizes the input and output match at
higher attenuation levels. The AMMC-6650 can be driven
by two complementary voltage ramps placed on V1 and
V2. Careful adjustment of the two control lines over a rela-
tively small voltage ranges are required to set the attenu-
ation and optimize VSWR.
The on-chip DC reference circuit can be used to optimize
VSWR for any attenuation setting, improve voltage versus
attenuation linearity and range, and provide temperature
compensation.
The on-chip DC reference circuit is a non-distributed“T”at-
tenuator designed to operate in a 500
system and track
the control voltage versus attenuation characteristics of
the RF attenuator. A simplified schematic of the AMMC-
6650 together with an op-amp driver that utilizes the DC
reference circuit is shown in Figure 14.
RFin
V1
RFout
+
_
500
R
REF
(620)
R
S
500
V
REF
V
CONTROL
R
L
(500)
OP AMP 1
A
B
C1
DCin
+
_
R1 (10K)
R2 (100)
OP AMP 2
C
D
V2
DCout
相关PDF资料
PDF描述
AMMC-6650-W50 0 MHz - 40000 MHz RF/MICROWAVE VARIABLE ATTENUATOR
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