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参数资料
| 型号： | AMMP-6222-TRG |
| 元件分类： | 放大器 |
| 英文描述： | 7000 MHz - 21000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, 1.25 MM HEIGHT, LEAD FREE, SMT, 8 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 414K |
| 代理商： | AMMP-6222-TRG |
2
Absolute Maximum Ratings (1)
Parameters/Condition
Symbol
Unit
Maximum
Drain to Ground Voltage
Vdd
V
5.5
Drain Current
Idd
mA
70
RF CW Input Power Max
Pin
dBm
0
Max channel temperature
Tch
C
+50
Storage temperature
Tstg
C
-65 +50
Maximum Assembly Temp
Tmax
C
260 for 20s
1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Idd and Pin
were determined at an ambient temperature of 25°C unless noted otherwise.
DC Specifications/ Physical Properties (2)
Parameter and Test Condition
Symbol
Unit
Minimum
Typical
Maximum
Drain Supply Current under any RF power drive and temp. (Vd=4.0 V)
Idd
mA
80
20
60
Drain Supply Voltage
Vd
V
3
4
5
Thermal Resistance(3)
θjc
°C/W
3.4
2. Ambient operational temperature TA=25°C unless noted
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy.
Thermal Resistance at backside temp. (Tb) = 25°C calculated from measured data.
AMMP-6222 RF Specifications (4)
TA= 25°C, Idd=20mA, Vdd = 4.0 V, Zo=50 W
Parameters and Test Conditions
Symbol
Units
Freq.
(GHz)
High Output Power Configuration
Low Output Power Configuration
Minimum
Typical
Maximum Minimum Typical
Maximum
Drain Current
Idd
mA
20
95
Small-Signal Gain (5)
Gain
dB
9, 2, 7 9
24
23
Noise Figure into 50W (5)
NF
dB
9, 2, 7
2.3
3.5
2.3
Output Power at dB Gain Compression
P-dB
dBm
5.5
4
Output Power at 3dB Gain Compression
P-3dB
dBm
7.5
6
Output Third Order Intercept Point
OIP3
dBm
29
27
Isolation
Iso
dB
-45
Input Return Loss
RLin
dB
-0
Output Return Loss
RLout
dB
-0
4. Refer to characteristic plots for detailed individual frequency performance.
5. All tested parameters guaranteed with measurement accuracy ± 0.5dB for gain and ±0.3dB for NF in the high output power configuration.
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