参数资料
型号: AMMP-6232-BLKG
元件分类: 放大器
英文描述: 18000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
封装: 5 X 5 MM, 1.25 MM HEIGHT, LEAD FREE, SMT, 8 PIN
文件页数: 6/9页
文件大小: 331K
代理商: AMMP-6232-BLKG
6
Biasing and Operation
The AMMP-6232 is normally biased with a positive drain
supply connected to the VDD pin and a negative gate
bias through bypass capacitors as shown in Figure 19. The
recommended drain supply voltage is 4 V and the gate bias
is approximately -0.95V to get the corresponding drain
current of 138mA. It is important to have 0.1uF bypass
capacitors and the capacitor should be placed as close
to the component as possible. Aspects of the amplier
performance may be improved over a narrower bandwidth
by application of additional conjugate, linearity, or low
noise (
7opt) matching.
After adjusting the gate bias to obtain 138mA at Vdd = 4V,
the AMMP-6232 can be safely biased at 3V or 5V (while
xing the gate bias) as desired. At 4V, the performance
is an optimal compromise between power consumption,
gain and power/linearity. It is both applicable to be used
as a low noise block or driver. At 3V, the amplier is ideal
as a front end low noise block where linearity is not highly
required. At 5V, the amplier can provide 1 to 2dBm more
output power for LO or transmitter driver applications
where high output power and linearity are often required.
Refer the Absolute Maximum Ratings table for allowed DC
and thermal conditions.
Figure 19. Usage of the AMMP-6232
AMMP-6232 Application and Usage
Figure 20. Evaluation/Test Board (available to qualied customer request)
Figure 21. Simplied AMMP-6232 Schematic
Top View
Package base: GND
Vdd
OUT
IN
12
3
4
5
6
7
8
0.1uF
4V
Vg
~ -0.95V
0.1uF
100pF
Vd 1
Ou t
In
Matching
Ne twork
Ma tching
Ne twork
Matching
Ne twork
Vg 1
Vg 2
Vd 2
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