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参数资料
| 型号： | AMMP-6421-TR1G |
| 元件分类： | 放大器 |
| 英文描述： | 13000 MHz - 16000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 5 X 5 MM, SMT-8 |
| 文件页数： | 5/12页 |
| 文件大小： | 257K |
| 代理商： | AMMP-6421-TR1G |
2
Absolute Maximum Ratings[1,2,3,4, and 5]
Symbols
Parameters
Unit
Max.
Notes
Vd
Positive Supply Voltage[2]
V6
2
Vg
Gate Supply Voltage
V
+1
Id
Drain Current
mA
TBD
PD
Power Dissipation[2,3]
W
8
2 and 3
Pin
CW Input Power[2]
dBm
23
2
Tch
Operating Channel Temp.[4,5]
°C
+150
4 and 5
Tstg
Storage Case Temp.
°C
-65 to +150
Tmax
Maximum Assembly Temp. (30 sec max)
°C
+260
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85
qC, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET
5. The operating channel temperature will directly aect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
DC Specications/ Physical Properties[6]
Symbols
Parameters and Test Conditions
Units
Typ.
Id(q)
Drain Supply Current (Vd=5 V, Vg set for typical Id(q) Typical)
mA
600
Vg
Gate Supply Operating Voltage (Id(q) = 600 mA)
V
+0.5
RTjc
Thermal Resistance[1] (Channel-to-Backside)
°C/W
17
Tch
Channel Temperature
°C
136
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5W with 1.43W RF power delivered to load. Power dissipation is 3.57W and the temperature rise in the channel is 33.6°C.
To maintain the maximum operational temperature below 155°C, the base plate temperature must be maintained below 94.3°C.
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相关代理商/技术参数 |
参数描述 |
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| AMMP-6421-TR2G | 功能描述:射频放大器 13-16 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMP-6425 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:18-28 GHz 1W Power Amplifier in SMT Package |
| AMMP-6425_13 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:18-28 GHz 1W Power Amplifier in SMT Package |
| AMMP-6425-BLK | 制造商:Avago Technologies 功能描述:17.7-27GHZ 1W POWER AMP, MMIC - Bulk |
| AMMP-6425-BLKG | 功能描述:射频放大器 18-28 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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