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参数资料
| 型号： | AMMP-6425-TR1G |
| 元件分类： | 放大器 |
| 英文描述： | 18000 MHz - 28000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, LEAD FREE, SMT, 8 PIN |
| 文件页数： | 4/11页 |
| 文件大小： | 283K |
| 代理商： | AMMP-6425-TR1G |
2
Absolute Maximum Ratings
Symbols
Parameters
Units
Minimum
Maximum
Notes
Vd-Vg
Drain to Gate Voltage
V
8
Vd
Positive Supply Voltage
V
5.5
Vg
Gate Supply Voltage
V
-2.5
0.5
Id
Drain Current
mA
TBD
2
PD
Power Dissipation
W
4
2 and 3
Pin
CW Input Power
dBm
20
2
Tch
Operating Channel Temp
qC
+150
4
Tstg
Storage Case Temp.
qC
-65 to +155
Tmax
Maximum Assembly Temp (30 sec max)
qC
+320
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. Functional operation at or near these
limitations will signicantly reduce the lifetime of the device.
2. Dissipated power PD is in any combination of DC voltage, Drain Current, input power and power delivered to the load.
3. When operated at maximum PD with a base plate temperature of 85
qC, the median time to failure (MTTF) is signicantly reduced.
4. These ratings apply to each individual FET. The operating channel temperature will directly aect the device MTTF. For maximum life, it is
recommended that junction temperatures (Tj) be maintained at the lowest possible levels. See MTTF vs. Tchannel Temperature Table.
DC Specications/ Physical Properties [6]
Symbol
Parameters and Test Conditions
Units
Value
Idq
Drain Supply Current
(Vdd=5 V, Vg set for Idq Typical)
mA
650
Vg
Gate Supply Operating Voltage
(Id(Q) = 650 (mA))
V
-1.1
RθJC
Thermal Resistance[6]
(Channel-to-Base Plate)
°C/W
17.8
Tch
Channel Temperature
°C
142.8
Notes:
6. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case is at saturated output power when DC power
consumption rises to 5.5W with 1.58W RF power delivered to load. Power dissipation is 3.92W and the temperature rise in the channel is 69.8
°C. In this condition, the channel temperature reached at the maximum operational channel temperature of 155°C. To maintain the maximum
operational temperature below 155°C, the base plate temperature must be maintained below 85°C
Thermal Properties
Parameter
Test Conditions
Value
Maximum Power Dissipation
Tbaseplate = 85°C
PD = 4W
Tchannel = 150°C
Thermal Resistance (
Tjc)
Vd = 5V
Id = 650mA
PD = 3.25W
Tbaseplate = 85°C
Tjc = 17.8°C/W
Tchannel = 143°C
Thermal Resistance (
Tjc)
Under RF Drive
Vd = 5V
Id = 900mA
Pout = 30dBm
Pd = 3.5W
Tbaseplate = 85°C
Tjc = 17.8°C/W
Tchannel = 147°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMP-6425-TR2G | 功能描述:射频放大器 18-28 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMP-6430 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:27-32 GHz 0.5W Power Amplifier in SMT Package |
| AMMP-6430_13 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:27-34 GHz, 0.5W Power Amplifier in SMT Package |
| AMMP-6430-BLKG | 功能描述:射频放大器 25-33 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMP-6430-TR1G | 功能描述:射频放大器 25-33 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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