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参数资料
| 型号： | AMMP-6425 |
| 元件分类： | 放大器 |
| 英文描述： | 18000 MHz - 28000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封装： | 5 X 5 MM, ROHS COMPLIANT, SMT, 8 PIN |
| 文件页数： | 8/11页 |
| 文件大小： | 905K |
| 代理商： | AMMP-6425 |
6
AMMP-6425 Application and Usage
Recommended quiescent DC bias condition for optimum
power and linearity performances is Vdd=5 volts with Vg
(-1.1V) set for Idq=650 mA. Minor improvements in per-
formance are possible depending on the application.
The drain bias voltage range is 3 to 5V. A single DC gate
supply connected to Vgg will bias all gain stages. Muting
can be accomplished by setting Vgg to the pinch-off
voltage Vp.
A simplified schematic for the AMMP6425 MMIC die is
shown in Figure 12. The MMIC die contains ESD and over
voltage protection diodes for Vg, and Vdd terminals.
The package diagram for the recommended assembly
is shown in Figure 13. In finalized package form, ESD
diodes protect all possible ESD or over voltage damages
between Vgg and ground, Vgg and Vdd, Vdd and ground.
Typical ESD diode current versus diode voltage for 11-
connected diodes in series is shown in Figure 14. Under
the recommended DC quiescent biasing condition at
Vds=5V, Ids=650mA, Vgg=-1V, typical gate terminal
current is approximately 0.3mA. If an active biasing
technique is selected for the AMMP6425 MMIC PA DC
biasing, the active biasing circuit must have more than
10-times higher internal current that the gate terminal
current.
An optional output power detector network is also
provided. The differential voltage between the Det-Ref
and Det-Out pads can be correlated with the RF power
(
)
ofs
ref
V
=
det
emerging from the RF output port. The detected voltage
is given by :
where Vref is the voltage at the DET_R port, Vdet is a
voltage at the DET_0 port, Vofs and is the zero-input-
power offset voltage.
There are three methods to calculate Vofs :
1. Vofs can be measured before each detector
measurement (by removing or switching off the
power source and measuring Vref - Vdet). This method
gives an error due to temperature drift of less than
0.01dB/50°C.
2. Vofs can be measured at a single reference
temperature. The drift error will be less than 0.25dB.
3. Vofs can either be characterized over temperature and
stored in a lookup table, or it can be measured at two
temperatures and a linear fit used to calculate Vofs at
any temperature. This method gives an error close to
the method #1.
The RF ports are AC coupled at the RF input to the first
stage and the RF output of the final stage. No ground
wired are needed since ground connections are made
with plated through-holes to the backside of the device.
dd
V
g
V
Three stage 0.5W power amplifier
in
RF
out
RF
DET_O
DET_R
DQ
Figure 12. Simplified schematic for the MMIC die
相关PDF资料 |
PDF描述 |
|---|---|
| AMMP-6441-BLKG | 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMP-6441-TR1G | 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMP-6441-TR2G | 36000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| AMMP-6522-TR2 | 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| AMMP-6522-BLK | 700 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMP-6425_13 | 制造商:AVAGO 制造商全称:AVAGO TECHNOLOGIES LIMITED 功能描述:18-28 GHz 1W Power Amplifier in SMT Package |
| AMMP-6425-BLK | 制造商:Avago Technologies 功能描述:17.7-27GHZ 1W POWER AMP, MMIC - Bulk |
| AMMP-6425-BLKG | 功能描述:射频放大器 18-28 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMP-6425-TR1 | 制造商:Avago Technologies 功能描述: |
| AMMP-6425-TR1G | 功能描述:射频放大器 18-28 GHz Power Amp RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
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