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参数资料
| 型号： | AMMP-6522-TR1G |
| 元件分类： | 放大器 |
| 英文描述： | 7000 MHz - 20000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封装： | 5 X 5 MM, LEAD FREE, SMT, 8 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 346K |
| 代理商： | AMMP-6522-TR1G |
2
Absolute Maximum Ratings[1]
Symbol
Parameter and Test Condition
Unit
Max.
Vdd
Drain to Ground Voltage
V
5.5
Vg
Gate to Ground Voltage
V
+0.8
Idd
Drain Current
mA
100
Ig
Gate Current
mA
1
Pin
RF CW Input Power Max
dBm
10
Tch
Max channel temperature
C
+150
Tstg
Storage temperature
C
-65 +150
Tmax
Maximum Assembly Temp
C
260 for 20s
Note:
1. Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vg,
Idd, Ig, and Pin were determined at an ambient temperature of 25°C unless noted otherwise.
DC Specications/ Physical Properties[2]
Symbol
Parameter and Test Condition
Unit
Min.
Typ.
Max.
Vdd
Drain Supply Voltage
V
3
4
5
Idd
Drain Supply Current (Vd = 4.0 V)
mA
75
95
Vg
Gate Supply Voltage (Ig = 0.1 mA)
V
-1.2
-1.0
-0.8
Tjc
Thermal Resistance(3)
C/W
27
2. Ambient operational temperature TA = 25°C unless noted.
3. Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside
temp. (Tb) = 25°C calculated from measured data.
Operating Conditions
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
RFfreq
RF Frequency
GHz
7
20
LOfreq
LO Frequency
GHz
5
22
IFfreq
IF Frequency
GHz
DC[8]
3.5
LO
LO Drive Power
dBm
+10
+15
+22
RF Specications[4,5,6]
TA = 25°C, Z0 = 50 Ω, Vdd = 4.0 V, Vg = -1 V, LO = +15 dBm, IF = 2 GHz
Symbol
Parameter
Freq (GHz)
Units
Min
Typ
Max
NF
Noise Figure
RF=8GHz, LO=10GHz
dB
2.6
3.3
RF=18GHz, LO=20GHz
3
3.3
CG
Conversion Gain
RF=8GHz, LO=10GHz
dB
12
13
RF=18GHz, LO=20GHz
12
14
IIP3
Input Third Order Intercept
RF=8GHz, LO=10GHz
dBm
-8
-6
RF=18GHz, LO=20GHz
-5
-0.4
Sup
Image Rejection
RF=8GHz, LO=10GHz
dB
15
29
RF=18GHz, LO=20GHz
15
30
2. Use IF = DC with caution. Please see “Biasing and Operation” for more details.
All tested parameters are guaranteed with the following measurement accuracy:
RF=8GHz:
±0.6dB for Conversion Gain, ±10dB for IRR, ±0.5dB for NF, ±0.8dBm for IIP3
RF=18GHz:
±1.8dB for Conversion Gain, ±1.6dB for IRR, ±0.6dB for NF, ±1.7dBm for IIP3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AMMP-6522-TR2G | 功能描述:射频放大器 LNA IR Mixer 6-22GHz RoHS:否 制造商:Skyworks Solutions, Inc. 类型:Low Noise Amplifier 工作频率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 输出截获点:37.5 dBm 功率增益类型:32 dB 噪声系数:0.85 dB 工作电源电压:5 V 电源电流:125 mA 测试频率:2.6 GHz 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:QFN-16 封装:Reel |
| AMMP-6530 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:5-30 GHz Image Reject Mixer |
| AMMP-6530-BLK | 功能描述:射频混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| AMMP-6530-TR1 | 功能描述:射频混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| AMMP-6530-TR2 | 功能描述:射频混合器 Mixer MMIC 5-30GHz RoHS:否 制造商:NXP Semiconductors 频率范围: 转换损失——最大: 工作电源电压:6 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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