参数资料
型号: AMMP-6630-TR1G
元件分类: 衰减器
英文描述: 5000 MHz - 30000 MHz RF/MICROWAVE VARIABLE ATTENUATOR
封装: 5 x 5 MM, 2 MM HEIGHT, SURFACE MOUNT PACKAGE-3
文件页数: 4/11页
文件大小: 284K
代理商: AMMP-6630-TR1G
2
Table 1. AMMP-6630 Absolute Maximum Ratings [1]
Symbol
Parameters and Test Conditions
Unit
Minimum
Maximum
VC
Voltage to Control Attenuation
V
0
1.6
Pin
RF Input Power
dBm
-
27
Tch
Operating Channel Temperature
°C
-
+150
Tstg
Storage Temperature
°C
-40
+150
Tmax
Maximum Assembly Temperature
°C
+300 for 60s
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device. The absolute maximum ratings for VC and Pin
were determined at an ambient temperature of 25°C unless noted otherwise.
Table 2. AMMP-6630 DC Specifications [1, 2]
Symbol
Parameters
Test Conditions
Unit
Min
Typical
Max
Ic_ref
VC Control Current (Min Attenuation)
VC = 0 V
PA
-0
30
Ic _ref
VC Control Current (Max Attenuation)
VC = 1.0 V
PA
-
150
200
Notes:
1. Ambient operation temperature TA = 25°C unless otherwise noted.
2. Data obtained from on-wafer measurements.
Table 3. AMMP-6630 RF Specifications [1, 2]
Small/Large-signal data measured on-wafer at TA = 25°C, Z0 = 50
:
Symbol
Parameters and Test Conditions
Units
Freq. [GHz]
Minimum
Typical
Maximum
Minimum Attenuation
(Reference State)
Small-signal S21
VC = 0 V
dB
7
5.0
16
2.5
25
3.5
34
3.5
Maximum Attenuation
Small-signal S21
VC = 1.0 V
dB
7
23.0
16
22.0
25
22.5
34
23.5
RLin and RLout
at Reference State
VC = 0 V
dB
<45
10
RLin and RLout
at Maximum State
VC = 1.0 V
dB
<45
10
Notes:
1. All tested parameters guaranteed with measurement accuracy ±2.5dB for Min Attenuation of 7GHz , ±1 for Min Attenuation of 16,25GHz &34GHz,
±3 for Max Attenuation of 7GHz, and ±2 for Max Attenuation of 16GHz, 25GHz &34GHz.
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