- 您现在的位置：买卖IC网 > PDF目录36689 > AN1A3Q-A 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | AN1A3Q-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 106K |
| 代理商： | AN1A3Q-A |
1998
Document No. D16165EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
AN1A3Q
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R1 = 1.0 k
, R2 = 10 k)
Complementary transistor with AA1A3Q
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
–100
mA
Collector current (Pulse)
IC(pulse) *
–200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
5.0 V, IC = 5.0 mA
35
60
100
DC current gain
hFE2 **
VCE =
5.0 V, IC = 50 mA
80
200
Collector saturation voltage
VCE(sat) **
IC =
5.0 mA, IB = 0.25 mA
0.04
0.2
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.7
0.5
V
High level input voltage
VIH **
VCE =
0.2 V, IC = 5.0 mA
2.0
1.0
V
Input resistance
R1
0.7
1.0
1.3
k
E-to-B resistance
R2
710
13
k
Turn-on time
ton
0.2
s
Storage time
tstg
5.0
s
Turn-off time
toff
VCC =
5 V, RL = 1 k
VI =
5 V, PW = 2
s
duty cycle
≤2 %
6.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2 %
相关PDF资料 |
PDF描述 |
|---|---|
| AN1A3Q | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1A4M | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1A4M-A | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1A4M-A | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| AN1A4P-A | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AN1A4M | 制造商:NEC 制造商全称:NEC 功能描述:PNP SILICON TRANSISTOR |
| AN1A4M(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| AN1A4P | 制造商:NEC 制造商全称:NEC 功能描述:PNP SILICON TRANSISTOR |
| AN1A4Z | 制造商:NEC 制造商全称:NEC 功能描述:COMPOUND TRANSISTOR |
| AN1-B0-10-450-533-D | 制造商:Carling Technologies 功能描述:A-SERIES CIRCUIT BREAKER - Bulk |
发布紧急采购，3分钟左右您将得到回复。