参数资料
型号: AO4407A
厂商: ALPHA
元件分类: MOSFETs
英文描述: P-Channel Enhancement Mode Field Effect Transistor
中文描述: 的P -沟道增强型场效应晶体管
文件页数: 1/4页
文件大小: 139K
代理商: AO4407A
Symbol
V
DS
V
GS
10 Sec
Steady State
-30
-12
-10
-9.2
-7.4
I
DM
I
AR
E
AR
3.1
2.0
1.7
1.1
T
J
, T
STG
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Symbol
Typ
32
60
17
Max
40
75
24
t
10s
Steady State
Steady State
R
θ
JL
°C
-55 to 150
W
±25
-60
26
101
A
mJ
V
V
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics
Units
°C/W
°C/W
R
θ
JA
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
B
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
G
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Continuous Drain
Current
A
Units
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
T
A
=70°C
I
D
P
D
Power Dissipation
A
T
A
=25°C
G
S
S
S
D
D
D
D
AO4407A
P-Channel Enhancement Mode Field Effect Transistor
Features
V
DS
= -30V
I
D
= -12A (V
GS
= -10V)
R
DS(ON)
< 11m
(V
GS
= -20V)
R
DS(ON)
< 13m
(V
GS
= -10V)
R
DS(ON)
< 38m
(V
GS
= -10V)
UIS TESTED!
RG, CISS, COSS, CRSS TESTED!
General Description
The AO4407A uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
Standard Product
AO4407A is Pb-free (meets ROHS & Sony 259
specifications).
G
D
S
SOIC-8
Top View
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
相关PDF资料
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