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参数资料
| 型号： | AO4611 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 1/7页 |
| 文件大小： | 170K |
| 代理商： | AO4611 |
Symbol
V
DS
V
GS
Max p-channel
-60
±20
-4.9
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
60
62.5
110
40
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
R
θ
JL
R
θ
JL
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
-55 to 150
-55 to 150
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
A
Steady-State
t
≤
10s
t
≤
10s
Steady-State
R
θ
JA
60
±20
6.3
5
40
2
1.28
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
-3.9
-30
2
1.28
A
T
A
=25°C
T
A
=70°C
I
D
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
T
A
=25°C
P
D
AO4611
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 60V -60V
I
D
= 6.3A (V
GS
=10V) -4.9A
(V
GS
= -10V)
R
DS(ON)
R
DS(ON)
< 25m
(V
GS
=10V) < 42m
(V
GS
=
-
10V)
< 30m
(V
GS
=4.5V) < 52m
(V
GS
=
-
4.5V)
General Description
The AO4611 uses advanced trench technology
MOSFETs to provide excellent R
DS(ON)
and low
gate charge. The complementary MOSFETs may
be used to form a level shifted high side switch,
and for a host of other applications.
Standard
Product AO4611 is Pb-free (meets ROHS &
Sony 259 specifications). AO4611L is a Green
Product ordering option. AO4611 and AO4611L
are electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4611L | Complementary Enhancement Mode Field Effect Transistor |
| AO4612 | Complementary Enhancement Mode Field Effect Transistor |
| AO4612L | Complementary Enhancement Mode Field Effect Transistor |
| AO4613 | Complementary Enhancement Mode Field Effect Transistor |
| AO4613L | Complementary Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4611_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:60V Dual P N-Channel MOSFET |
| AO4611L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4612 | 功能描述:MOSFET N/P-CH COMPL 60V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4612_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:60V Complementary Enhancement Mode Field Effect Transistor |
| AO4612L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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