- 您现在的位置：买卖IC网 > PDF目录375332 > AO4621 (ALPHA) Complementary Enhancement Mode Field Effect Transistor PDF资料下载
参数资料
| 型号： | AO4621 |
| 厂商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增强模式互补场效应晶体管 |
| 文件页数： | 5/7页 |
| 文件大小： | 149K |
| 代理商： | AO4621 |
AO4621
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-40
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-3
nA
V
A
-1
-20
-1.9
32.5
52
51.4
12
-0.75
45
65
63
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
S
V
A
-1
-2.6
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge (10V)
657
143
63
6.5
pF
pF
pF
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
13.6
6.8
1.8
3.9
7.5
6.7
26
11.2
22.3
15.2
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=-5A, dI/dt=100A/
μ
s
I
F
=-5A, dI/dt=100A/
μ
s
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-20V, R
L
=4
,
R
GEN
=3
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
V
GS
=-10V, V
DS
=-20V, I
D
=-5A
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-4.8A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
V
GS
=-10V, I
D
=-5A
m
V
GS
=-4.5V, I
D
=-2A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-10V, V
DS
=-5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage
I
D
=-10mA, V
GS
=0V
V
DS
=-32V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
P-Channel Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
value in any a given application depends on the user's specific board design. The current rating is based on the t
curve provides a single pulse rating.
Rev 0 : June 2006
≤
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4622 | Complementary Enhancement Mode Field Effect Transistor |
| AO4624 | Complementary Enhancement Mode Field Effect Transistor |
| AO4625 | Complementary Enhancement Mode Field Effect Transistor |
| AO4700 | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4700L | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4622 | 功能描述:MOSFET N/P-CH COMPL 20V 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4622_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:20V Dual P N-Channel MOSFET |
| AO4624 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4624_09 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO4625 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
发布紧急采购，3分钟左右您将得到回复。