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参数资料
| 型号： | AO4704L |
| 厂商： | ALPHA |
| 英文描述： | N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | N沟道增强模式场效应晶体管肖特基二极管 |
| 文件页数： | 1/5页 |
| 文件大小： | 164K |
| 代理商： | AO4704L |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
3.1
2
3.1
2
I
F
4.4
3.2
W
Schottky reverse voltage
30
A
Pulsed Diode Forward Current
B
30
Continuous Forward Current
A
A
10.4
Pulsed Drain Current
B
40
Gate-Source Voltage
13
Continuous Drain Current
A
I
D
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
MOSFET
30
±12
Schottky
AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
V
DS
(V) = 30V
I
D
= 13 A (V
GS
= 10V)
R
DS(ON)
< 11.5m
(V
GS
= 10V)
R
DS(ON)
< 13m
(V
GS
= 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
General Description
The AO4704 uses advanced trench technology to
provide excellent R
DS(ON)
,
shoot-through immunity and
body diode characteristics. This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further.
AO4704 is Pb-free (meets ROHS & Sony
259 specifications). AO4704L is a Green Product
ordering option. AO4704 and AO4704L are
electrically identical.
G
D
S
A
K
G
S/A
S/A
S/A
D/K
D/K
D/K
D/K
1
2
3
4
8
7
6
5
SOIC-8
Alpha & Omega Semiconductor, Ltd.
相关PDF资料 |
PDF描述 |
|---|---|
| AO4705 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4705L | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4706 | 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 2K; RAM: 192; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 250 (@8MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLSP0020JB-A (20P2F-A) |
| AO4707 | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4708 | N-Channel Enhancement Mode Field Effect Transistor |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4705 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4705L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4706 | 功能描述:MOSFET N-CH 30V 16.5A 8-SOIC RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SRFET™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AO4706_10 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V N-Channel MOSFET |
| AO4707 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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