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参数资料
| 型号： | AO4801 |
| 厂商： | ALPHA |
| 英文描述： | Dual P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 双P沟道增强型场效应晶体管 |
| 文件页数： | 2/4页 |
| 文件大小： | 114K |
| 代理商： | AO4801 |
AO4801
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1.3
nA
V
A
-0.7
-25
-1
42.5
49
74
64
120
T
J
=125°C
54
80
11
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
7
S
V
A
-0.75
-1
-3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
952
103
77
5.9
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
9.5
2
3.1
12
4
37
12
21
13
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
V
GS
=-2.5V, I
D
=-1A
V
DS
=-5V, I
D
=-5A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-10V, I
D
=-5A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-4.5V, I
D
=-4A
I
S
=-1A,V
GS
=0V
I
F
=-5A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-5A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=3
,
R
GEN
=6
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any given application depends on the user's specific board design. The current rating is based on the t
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
Rev 3 : June 2005
≤
10s thermal
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4801_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4801A | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| AO4801A_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V P-Channel MOSFET |
| AO4801AL | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:2 个 P 沟道（双） FET 功能:逻辑电平门 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:5A 不同?Id，Vgs 时的?Rds On（最大值）:48 毫欧 @ 5A，10V 不同 Id 时的 Vgs（th）（最大值）:1.3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:9nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:780pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
| AO4801AL_001 | 功能描述:MOSFET 2P-CH 30V 5A 8SOIC 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:2 个 P 沟道（双） FET 功能:逻辑电平门 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:5A 不同?Id，Vgs 时的?Rds On（最大值）:48 毫欧 @ 5A，10V 不同 Id 时的 Vgs（th）（最大值）:1.3V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:9nC @ 4.5V 不同 Vds 时的输入电容（Ciss）:780pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商器件封装:8-SO 标准包装:1 |
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