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参数资料
| 型号： | AO4912 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 30 V, 0.026 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 1/8页 |
| 文件大小： | 508K |
| 代理商： | AO4912 |
Symbol
Max Q2
Units
VDS
V
VGS
V
IDM
IAR
A
EAR
mJ
TJ, TSTG
°C
Symbol
VDS
IFM
TJ, TSTG
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
°C
2
Pulsed Diode Forward Current
B
Continuous Forward
Current
AF
PD
IF
TA=25°C
TA=70°C
30
V
TA=25°C
Parameter
Reverse Voltage
A
2.2
20
3
TA=70°C
Maximum Schottky
Max Q1
30
±20
8.5
17
43
15
34
Units
TA=25°C
TA=70°C
Power Dissipation
PD
Pulsed Drain Current
B
Continuous Drain
Current
AF
ID
-55 to 150
Junction and Storage Temperature Range
2
1.28
TA=25°C
TA=70°C
2
Avalanche Current
B
±12
30
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Repetitive avalanche energy 0.3mH
B
Gate-Source Voltage
W
A
6.4
40
30
7
6.8
AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1
Q2
VDS (V) = 30V
VDS(V) = 30V
ID = 8.5A
ID=7A
(VGS = 10V)
RDS(ON) < 17m
<26m
(VGS = 10V)
RDS(ON) < 25m
<31m
(VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
General Description
The AO4912 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency
further. Standard Product AO4912 is Pb-free (meets
ROHS & Sony 259 specifications).
SOIC-8
G1
S1/A
D2
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AO4912L | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914 | 制造商:Alpha & Omega Semiconductor 功能描述: |
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:2 个 N 沟道（双） FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:8A 不同?Id，Vgs 时的?Rds On（最大值）:20.5 毫欧 @ 8A，10V 不同 Id 时的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:18nC @ 10V 不同 Vds 时的输入电容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-SOIC 供应商器件封装:8-SO 标准包装:1 |
| AO4914_11 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode |
| AO4914A | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
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