- 您现在的位置：买卖IC网 > PDF目录36691 > AON6428 (ALPHA AND OMEGA SEMICONDUCTOR) 43 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | AON6428 |
| 厂商： | ALPHA AND OMEGA SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 43 A, 30 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, GREEN, DFN-8 |
| 文件页数： | 2/6页 |
| 文件大小： | 164K |
| 代理商： | AON6428 |
AON6428
Symbol
Min
Typ
Max
Units
BVDSS
30
V
VDS=30V, VGS=0V
1
TJ=55°C
5
IGSS
±100
nA
VGS(th)
Gate Threshold Voltage
1.2
1.7
2.2
V
ID(ON)
80
A
8.3
10
TJ=125°C
12.4
15
11.3
14.5
m
gFS
43
S
VSD
0.7
1
V
IS
35
A
Ciss
620
770
920
pF
Coss
170
240
310
pF
Crss
45
77
110
pF
Rg
0.4
0.8
1.6
Qg(10V)
11.8
14.8
17.8
nC
Qg(4.5V)
5.7
7.1
8.5
nC
Qgs
1.7
2.2
2.6
nC
Qgd
1.8
3.1
4.3
nC
tD(on)
5
ns
tr
3
ns
tD(off)
18
ns
tf
3
ns
trr
9
11
13
ns
Qrr
18
23
28
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=20A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
VDS=5V, ID=20A
IF=20A, dI/dt=500A/s
SWITCHING PARAMETERS
Maximum Body-Diode Continuous Current
Input Capacitance
Body Diode Reverse Recovery Time
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Forward Transconductance
Diode Forward Voltage
VGS=10V, VDS=15V, RL=0.75,
RGEN=3
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
Reverse Transfer Capacitance
VGS=0V, VDS=15V, f=1MHz
IS=1A,VGS=0V
m
On state drain current
VGS=4.5V, ID=20A
RDS(ON)
Drain-Source Breakdown Voltage
ID=250A, VGS=0V
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
VDS=VGS ID=250A
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
IDSS
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
A
A. The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
Rev 5: April 2011
www.aosmd.com
Page 2 of 6
相关PDF资料 |
PDF描述 |
|---|---|
| AON7406 | 25 A, 30 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP01N15GK-HF | 100 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP01N40G-HF | 400 V, 16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AP02N40J-HF | 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| AP02N40H-HF | 1.6 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AON6428_103 | 功能描述:MOSFET N-CH 30V 11A 制造商:alpha & omega semiconductor inc. 系列:- 包装:带卷（TR） 零件状态:过期 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:30V 电流 - 连续漏极（Id）（25°C 时）:11A（Ta），43A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:10 毫欧 @ 20A，10V 不同 Id 时的 Vgs（th）（最大值）:2.2V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:17.8nC @ 10V 不同 Vds 时的输入电容（Ciss）:770pF @ 15V 功率 - 最大值:2W 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:8-PowerSMD，扁平引线 供应商器件封装:8-DFN（5x6） 标准包装:1 |
| AON6428L | 功能描述:MOSF N CH 30V 43A DFN5X6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AON6435 | 功能描述:MOSFET P-CH 30V 12A 8DFN RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| AON6440 | 制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:40V N-Channel MOSFET |
| AON6442 | 制造商:Alpha & Omega Semiconductor 功能描述:Trans MOSFET N-CH 40V 65A 8-Pin DFN EP 制造商:Alpha & Omega Semiconductor 功能描述:MOSFET N-CH 40V 22A DFN5X6 |
发布紧急采购，3分钟左右您将得到回复。