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参数资料
| 型号： | AP01N40J |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 0.5 A, 400 V, 16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 67K |
| 代理商： | AP01N40J |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Lower Gate Charge
BVDSS
400V
▼ 100% Avalanche Rated
RDS(ON)
16Ω
▼ Fast Switching Performance
ID
0.5A
▼ Simple Drive Requirement
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TC=25℃
Total Power Dissipation
W
W/℃
EAS
Single Pulse Avalanche Energy
2
mJ
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
7.2
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data & specifications subject to change without notice
201018072-1/4
±20
Linear Derating Factor
AP01N40J
0.5
0.14
0.5
0.4
RoHS-compliant Product
2
17.4
Parameter
Rating
400
-55 to 150
Storage Temperature Range
-55 to 150
Parameter
G
D
S
The TO-251 package is widely preferred for commercial-industrial
through-hole applications.
G
D
S
TO-251(J)
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
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