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参数资料
| 型号： | AP02N60T-H-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 700 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 131K |
| 代理商： | AP02N60T-H-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ 100% Avalanche Test
BVDSS
700V
▼ Fast Switching Characteristics
RDS(ON)
9
▼ Simple Drive Requirement
ID
0.3A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
V
ID@TL=25℃
Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
1
A
PD@TL=25℃
Total Power Dissipation
W
EAS
Single Pulse Avalanche Energy3
mJ
TSTG
℃
TJ
Operating Junction Temperature Range
℃
Thermal Data
Symbol
Value
Units
Rthj-a
Maximum Thermal Resistance, Junction-ambient
150
℃
/W
Rthj-l
Maximum Thermal Resistance, Junction-lead
60
℃
/W
Data & specifications subject to change without notice
Storage Temperature Range
-55 to 150
1.2
2
25
-55 to 150
Parameter
+30
0.3
Halogen-Free Product
Rating
Parameter
200911041
1
AP02N60T-H-HF
700
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The TO-92 package is widely used for commercial-industrial applications.
G
D
S
G
D
S
TO-92
Top View
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