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参数资料
| 型号： | AP03N70H-A-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3.3 A, 650 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/4页 |
| 文件大小： | 97K |
| 代理商： | AP03N70H-A-HF |
AP03N70H/J-A-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0.1
0.5
0.9
1.3
1.7
2.1
2.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =1.6A
V G =10V
0.8
0.9
1.0
1.1
1.2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
BV
DSS
(V
)
0
1
2
3
4
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
5.0V
4.5V
V G =4.0V
10V
6.0V
0
1
2
0
5
10
15
20
25
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
V G =3.5V
4.5V
4.0V
10V
5.0V
0.01
0.1
1
10
100
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j = 25
o C
T j = 150
o C
0
1
2
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP03N70H-H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP03N70HJ | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP03N70HJ-H | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP03N70I | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:100% Avalanche Test, Fast Switching, Simple Drive Requirement |
| AP03N70I-A | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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