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参数资料
| 型号： | AP0504GMT-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 23.6 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 94K |
| 代理商： | AP0504GMT-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
40V
▼ SO-8 Compatible with Heatsink
RDS(ON)
5.5m
▼ Low On-resistance
ID
75A
▼ RoHS Compliant & Halogen-Free
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
EAS
Single Pulse Avalanche Energy
4
mJ
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.2
℃
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
25
℃
/W
Data & specifications subject to change without notice
AP0504GMT-HF
5
Halogen-Free Product
75
Pulsed Drain Current
1
300
Parameter
Rating
Drain-Source Voltage
40
Thermal Data
Parameter
Gate-Source Voltage
+20
Continuous Drain Current
3
23.6
Continuous Drain Current (Chip)
Continuous Drain Current
3
19
200911101
Total Power Dissipation
56.8
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
28.8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
S
G
PMPAK 5x6
D
相关PDF资料 |
PDF描述 |
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| AP05N20GI-HF | 5.8 A, 200 V, 0.56 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| AP05N50H | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| AP05N50I | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| AP05N50S-HF | 5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
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