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参数资料
| 型号： | AP0603GH-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 72 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 代理商： | AP0603GH-HF |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
6m
▼ Fast Switching Characteristic
ID
72A
▼ RoHS Compliant & Halogen-Free
Description
□
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃
/W
Rthj-a
62.5
℃
/W
Data & specifications subject to change without notice
AP0603GH-HF
50
Halogen-Free Product
Parameter
Rating
Drain-Source Voltage
30
Total Power Dissipation
Gate-Source Voltage
+20
Continuous Drain Current
72
Continuous Drain Current
45
Pulsed Drain Current
1
288
Thermal Data
Parameter
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Total Power Dissipation
3
2
201006213
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
G
D
S
TO-252(H)
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
G
D
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP0603GMA | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP0603GM-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:Low On-resistance, Simple Drive Requirement |
| AP0611-E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwave/Millimeter Wave Amplifier |
| AP0612-D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwave/Millimeter Wave Amplifier |
| AP0612-E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwave/Millimeter Wave Amplifier |
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