参数资料
型号: AP0904GMT-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 17.5 A, 40 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
文件页数: 1/4页
文件大小: 94K
代理商: AP0904GMT-HF
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Simple Drive Requirement
BVDSS
40V
▼ SO-8 Compatible with Heatsink
RDS(ON)
9.5m
▼ Low On-resistance
ID
46A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TC=25℃
W
PD@TA=25℃
W
EAS
Single Pulse Avalanche Energy
4
mJ
TSTG
TJ
Symbol
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
3.6
/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
25
/W
Data & specifications subject to change without notice
AP0904GMT-HF
5
Halogen-Free Product
46
Pulsed Drain Current
1
160
Parameter
Rating
Drain-Source Voltage
40
Thermal Data
Parameter
Gate-Source Voltage
+20
Continuous Drain Current
3
17.5
Continuous Drain Current (Chip)
Continuous Drain Current
3
14
200911101
Total Power Dissipation
34.7
1
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
Total Power Dissipation
28.8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
S
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink and
lower profile.
S
G
PMPAK 5x6
D
相关PDF资料
PDF描述
AP09N20BGI-HF 7.8 A, 200 V, 0.46 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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AP09N50P-HF 9 A, 500 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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