参数资料
型号: AP1117KL-13
厂商: Diodes Inc
文件页数: 4/13页
文件大小: 0K
描述: IC REG LDO ADJ 1A TO263-3L
标准包装: 1
稳压器拓扑结构: 正,可调式
输出电压: 1.25 V ~ 5 V
输入电压: 6.4 V ~ 18 V
电压 - 压降(标准): 1.3V @ 1A
稳压器数量: 1
电流 - 输出: 1A
电流 - 限制(最小): 1.1A
工作温度: 0°C ~ 125°C
安装类型: 表面贴装
封装/外壳: TO-263-3,D²Pak(2 引线+接片),TO-263AB
供应商设备封装: TO-263-3
包装: 标准包装
产品目录页面: 1135 (CN2011-ZH PDF)
其它名称: AP1117KLDIDKR
AP1117/AP1117I
Electrical Characteristics (cont.) (@T A = +25°C, unless otherwise specified.)
Parameter
Conditions
Min
Typ
Max
Unit
Load Regulation
(cont.)
Dropout Voltage
(V IN -V OUT )
AP1117-3.3
AP1117-5.0
AP1117-ADJ/1.5/1.8
2.5/3.3/5.0
V IN = 5V, 0 ≤ I OUT ≤ 1A,
T A = +25°C (Notes 5, 6)
V IN = 8V, 0 ≤ I OUT ≤ 1A,
T A = +25°C (Notes 5, 6)
I OUT = 800mA, ? V OUT = 1%
V OUT 0°C ≤ T J ≤ +125°C
26
40
1.2
33
50
1.3
mV
mV
V
Dropout Voltage
(V IN -V OUT )
Current Limit
Minimum Load Current
(Note 7)
AP1117-ADJ/1.5/1.8
2.5/3.3/5.0
AP1117I-ADJ/1.5/1.8
2.5/3.3/5.0
AP1117-ADJ/1.5/1.8
2.5/3.3/5.0
AP1117-XXX
I OUT = 1A,
? V OUT = 1% V OUT
(V IN -V OUT ) = 5V
0°C ≤ T J ≤ +125°C
0°C ≤ T J ≤ +125°C
-40°C ≤ T J ≤ +125°C
1. 1
1.3
5
1.4
10
V
A
mA
Thermal Regulation
Ripple Rejection
Temperature Stability
θ JA Thermal Resistance
Junction-to-Ambient θ JA
θ JC Thermal Resistance
Junction-to-Case
T A = +25°C, 30ms pulse
F = 180Hz, C OUT = 25μF Tantalum, I OUT = 1A
AP1117-XXX V IN = V OUT +3V
I O = 10mA
SOT89-3: Control Circuitry/Power Transistor (Note 8)
SOT223: Control Circuitry/Power Transistor (Note 9)
TO252: Control Circuitry/Power Transistor (Note 8)
TO220-3: Control Circuitry/Power Transistor (Note 8)
TO263: Control Circuitry/Power Transistor (Note 8)
SOT89-3: Control Circuitry/Power Transistor (Note 8)
SOT223: Control Circuitry/Power Transistor (Note 9)
TO252: Control Circuitry/Power Transistor (Note 8)
TO220-3: Control Circuitry/Power Transistor (Note 8)
TO263: Control Circuitry/Power Transistor (Note 8)
0.008
60
0.5
164
107
73
78
60
42
15
12
3.5
3.5
0.040
70
%/W
dB
%
°C/W
°C/W
Notes:
7. Quiescent current is defined as the minimum output current required in maintaining regulation. At 12V input/output differential the device is guaranteed
to regulate if the output current is greater than 10mA.
8. Test conditions for SOT89-3, TO220-3, TO252 and TO263: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper,with minimum
recommended pad layout, no air flow. The case point of θ JC is located on the thermal tab.
9. Test conditions for SOT223: Devices mounted on FR-4 substrate, single sided PC board, 2oz copper, with 5mm x 5mm thermal pad layout, no air flow.
The case point of θ JC is located on the thermal tab.
AP1117/AP1117I
Document number: DS31009 Rev. 23 - 2
4 of 13
June 2013
? Diodes Incorporated
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