参数资料
型号: AP1122EG-U
厂商: Diodes Inc
文件页数: 3/11页
文件大小: 0K
描述: IC REG LDO 1.2V 1A SOT223
产品变化通告: Wire Change 18/June/2008
End Of Life 10/June/2010
标准包装: 75
稳压器拓扑结构: 正,固定式
输出电压: 1.2V
输入电压: 最高 12V
稳压器数量: 1
电流 - 输出: 1A(最小值)
电流 - 限制(最小): 1.1A
工作温度: 0°C ~ 125°C
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223-3
包装: 管件
AP1122
1A LOW DROPOUT POSITIVE REGULATOR
Absolute Maximum Ratings
C
C
Symbol
V IN
T ST
T MJ
Parameter
DC Supply Voltage
Storage Temperature
Maximum Junction Temperature
Rating
-0.3 to 12
-65 to +150
150
Unit
V
o
o
Recommended Operating Conditions
C
Symbol
I OUT
T OP
Parameter
Output Current
Operating Junction Temperature Range
Min
-
0
Max
1.0
125
Unit
A
o
Electrical Characteristics (Under Operating Conditions)
2.5V ≦ V IN ≦ 12V, I O =10mA, T A =25 C
Parameter
Output Voltage
Test Conditions
o
Min
1.176
Typ.
1.2
Max
1.224
Unit
V
Line Regulation
Load Regulation
Dropout Voltage
(V IN -V OUT )
Current Limit
2.5V ≦ V IN ≦ 12V, I O =10mA, T A =25 o C
V IN =2.5V~12V, 10mA<Io<1A, T A =25 o C (Note 2, 3)
I OUT = 1A , Δ V OUT = 1%V OUT
(V IN -V OUT ) = 5V
1. 1
0.2
1
1.3
%
%
V
A
T A =25 C, 30ms pulse
Minimum Load Current
(Note 4)
Thermal Regulation
Ripple Rejection
Temperature Stability
0 o C ≦ T J ≦ 125 o C
o
F=120Hz,C OUT =25uF Tantalum, I OUT =1A, V IN =V OUT +3V
I O =10mA
5
0.008
60
0.5
10
0.04
70
mA
%/W
dB
%
SOT89-3L: Control Circuitry/Power Transistor (Note 5)
182
θ JA Thermal Resistance
Junction-to-Ambient
SOT223-3L: Control Circuitry/Power Transistor (Note 6)
TO252-3L: Control Circuitry/Power Transistor (Note 5)
TO220-3L: Control Circuitry/Power Transistor (Note 5)
107
73
78
o
C/W
TO263-3L: Control Circuitry/Power Transistor (Note 5)
SOT89-3L: Control Circuitry/Power Transistor (Note 5)
60
42
θ JC Thermal Resistance
Junction-to-Case
SOT223-3L: Control Circuitry/Power Transistor (Note 6)
TO252-3L: Control Circuitry/Power Transistor (Note 5)
TO220-3L: Control Circuitry/Power Transistor (Note 5)
16
12
3.5
o
C/W
TO263-3L: Control Circuitry/Power Transistor (Note 5)
3.5
Notes:
2. See thermal regulation specifications for changes in output voltage due to heating effects. Line and load regulation are
measured at a constant junction temperature by low duty cycle pulse testing. Load regulation is measured at the output lead
= 1/18” from the package.
3. Line and load regulation are guaranteed up to the maximum power dissipation of 15W. Power dissipation is determined by the
difference between input and output differential and the output current. Guaranteed maximum power dissipation will not be
available over the full input/output range.
4. Quiescent current is defined as the minimum output current required in maintaining regulation. At 12V input/output differential
the device is guaranteed to regulate if the output current is greater than 10mA.
5. Test conditions for SOT89-3L, TO252-3L, TO220-3L, and TO263-3L: Devices mounted on FR-4 substrate, single sided PC
board, 2oz copper, with minimum recommended pad layout, no air flow.
6. Test condition for SOT223-3L: Device mounted on FR-4 substrate, single sided PC board, 2oz copper, with 5mmX5mm thermal
pad layout, no air flow.
AP1122
Document number: DS31012 Rev. 9 - 2
3 of 11
May 2010
? Diodes Incorporated
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AP1122EL-U 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1A LOW DROPOUT POSITIVE REGULATOR
AP1122K 制造商:ANACHIP 制造商全称:Anachip Corp 功能描述:1A Low Dropout Positive Regulator
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