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参数资料
| 型号： | AP1203GM |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 11.2 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SOP-8 |
| 文件页数： | 1/5页 |
| 文件大小： | 205K |
| 代理商： | AP1203GM |
Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
30V
▼ Simple Drive Requirement
RDS(ON)
12mΩ
▼ Fast Switching Characteristic
ID
11.2A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TA=25℃
A
ID@TA=70℃
A
IDM
A
PD@TA=25℃
W
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-a
Maximum Thermal Resistance, Junction-ambient
3
50
℃
/W
Data and specifications subject to change without notice
200812291
1
AP1203GM
Rating
30
+20
11.2
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Storage Temperature Range
Continuous Drain Current
3
9
Pulsed Drain Current
1
50
RoHS-compliant Product
Thermal Data
Parameter
Total Power Dissipation
2.5
-55 to 150
Operating Junction Temperature Range
-55 to 150
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
G
D
SO-8
G
D
S
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP1203GMA | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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