参数资料
型号: AP15P15GH-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 15 A, 140 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
文件页数: 4/4页
文件大小: 94K
代理商: AP15P15GH-HF
AP15P15GH-HF
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Typical Power Dissipation
Fig 12. Gate Charge Waveform
4
Q
VG
-10V
QGS
QGD
QG
Charge
0
3
6
9
12
15
0
2040
6080
Q G , Total Gate Charge (nC)
-V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = - 80 V
I D = - 18 A
0
1000
2000
3000
4000
1
5
9
131721
2529
-V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
1
10
100
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
-I
D
(A
)
T C =25
o C
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this area
limited by RDS(ON)
0
20
40
60
80
100
0
50
100
150
T C , Case Temperature (
o C )
P
D
(W
)
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