参数资料
型号: AP18N20GS-HF
厂商: ADVANCED POWER ELECTRONICS CORP
元件分类: JFETs
英文描述: 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装: HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN
文件页数: 3/4页
文件大小: 102K
代理商: AP18N20GS-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
AP18N20GS/P-HF
0
10
20
30
40
0
4
8
12
16
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =25
o C
V G = 6 .0V
16 V
12 V
10 V
8.0 V
0
10
20
30
0
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C = 150
o C
120
150
180
210
240
2468
10
V GS Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =5A
T C =25
o C
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =8A
V G =10V
0
2
4
6
8
10
12
14
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
V G = 6 .0V
16 V
12 V
10 V
8.0 V
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