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参数资料
| 型号： | AP18P10GJ |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251 |
| 封装： | ROHS COMPLIANT PACKAGE-3 |
| 文件页数： | 3/6页 |
| 文件大小： | 174K |
| 代理商： | AP18P10GJ |
AP18P10GH/J
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
120
150
180
210
240
270
300
246
8
10
-V GS , Gate-to-Source Voltage (V)
R
DS(
ON)
(m
Ω
)
I D =-8 A
T C =25 ℃
0
10
20
30
40
0
4
8
12
16
20
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =25
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0 V
0.4
0.8
1.2
1.6
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
R
DS(
ON)
I D = -12 A
V G = -10V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , Source-to-Drain Voltage (V)
-I
S(A)
T j =25
o C
T j =150
o C
0.0
0.5
1.0
1.5
2.0
-50
0
50
100
150
T j , Junction Temperature (
o C)
Norm
alize
d
-
V
GS(
th)
(V)
0
5
10
15
20
02
46
8
10
-V DS , Drain-to-Source Voltage (V)
-I
D
,
Drain
Current
(A)
T C =150
o C
-10V
-7.0V
-5.0V
-4.5V
V G = -3.0V
相关PDF资料 |
PDF描述 |
|---|---|
| AP18P10GH | 12 A, 100 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 |
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| AP18T10GI | 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AP18P10GK-HF | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18P10GS | 制造商:A-POWER 制造商全称:Advanced Power Electronics Corp. 功能描述:P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| AP18SC | 制造商:Banner Engineering 功能描述:Aperture Kit, Includes: three round apertures, 0.5 mm 1.0 mm & 2.5 mm , For Opp |
| AP18SC-74361 | 制造商:Banner Engineering 功能描述:AP18SC-74361 NO APERTURES HOUSING O-RING LENS |
| AP18SCN | 制造商:Banner Engineering 功能描述:Aperture Kit, Includes: three round apertures, 0.5 mm 1.0 mm & 2.5 mm , For Opp |
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