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参数资料
| 型号： | AP18T10GI |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 9 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | ROHS COMPLIANT, TO-220CFM, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 94K |
| 代理商： | AP18T10GI |
AP18T10GI
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
0.31
trr
Qrr
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
100
140
180
220
260
300
4567
89
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =5 A
T C =25
o C
0
4
8
12
16
20
02468
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
V G =4.5V
T C =25
o C
10V
7.0V
6.0V
5.0V
0
4
8
12
16
20
04
8
12
16
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T C =150
o C
V G =5.0V
10V
9.0V
8.0V
7.0V
0.4
0.8
1.2
1.6
2.0
2.4
2.8
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
V G =10V
I D =5A
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V SD , Source-to-Drain Voltage (V)
I
S
(A
)
T j =25
o C
T j =150
o C
1.2
1.6
2
2.4
2.8
3.2
-50
0
50
100
150
T j ,Junction Temperature (
o C)
V
GS(t
h)
(V
)
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