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参数资料
| 型号： | AP18T10GM-HF |
| 厂商： | ADVANCED POWER ELECTRONICS CORP |
| 元件分类： | JFETs |
| 英文描述： | 3 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, SOP-8 |
| 文件页数： | 3/4页 |
| 文件大小： | 94K |
| 代理商： | AP18T10GM-HF |
AP18T10GM-HF
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode
Junction Temperature
3
0
4
8
12
16
20
024
68
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
10V
7.0V
6.0V
5.0V
V G =4.0V
T A =25
o C
0
4
8
12
16
03
69
12
V DS , Drain-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T A =150
o C
10V
8.0V
7.0V
6.0V
V G =5.0V
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
I
S(A
)
T j =25
o C
T j =150
o C
0.3
0.8
1.3
1.8
2.3
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
R
DS(ON)
I D =3 A
V G =10V
100
120
140
160
180
200
246
8
10
V GS , Gate-to-Source Voltage (V)
R
DS(ON)
(m
Ω
)
I D =2A
T A =25
o C
0.3
0.6
0.9
1.2
1.5
-50
0
50
100
150
T j , Junction Temperature (
o C)
N
o
rmalize
d
V
GS(t
h)
(V
)
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